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Locating Gases in Porous Materials: Cryogenic Loading of Fuel-Related Gases Into a Sc-based Metal-Organic Framework under Extreme Pressures - Deleted

DOI: 10.1002/ange.v127.45 DOI Help

Authors: Jorge Sotelo (EaStCHEM School of Chemistry, Joseph Black Building, West Mains Road, Edinburgh) , Christopher Woodall (University of Edinburgh) , Dave Allan (Diamond Light Source) , Eugene Gregoryanz (School of Physics and Centre for Science at Extreme Conditions, University of Edinburgh) , Ross Howie (School of Physics and Centre for Science at Extreme Conditions, University of Edinburgh) , Konstantin Kamenev (University of Edinburgh) , Mike Probert (Newcastle University) , Paul Wright (University of St Andrews) , Stephen Moggach (The University of Edinburgh)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Angewandte Chemie , VOL 127 , PAGES 13530 - 13534

State: Published (Approved)
Published: November 2015

Abstract: We report a study on the transition temperature TC of Cr-doped topological insulator thin films, where an increase in the ferromagnetic onset can provide a pathway towards low-power spintronics in the future. Arrott plots, measured by surface-sensitive x-ray magnetic circular dichroism at the Cr L2,3 edge as a function of field at various low temperatures, give a TC ≈7K for the pristine surface. This is comparable to the bulk value of the film, which means that there is no indication that the spontaneous magnetization is different near the surface. Evaporation of a thin layer of Co onto the pristine surface of the in-situ cleaved sample increases the ordering temperature near the surface to ∼19K, while in the bulk it rises to ∼10K. X-ray absorption spectroscopy shows that Cr enters the Bi2Se3 host matrix in a divalent state, and is unchanged by the Co deposition. These results demonstrate a straightforward procedure to increase the transition temperature of doped topological insulators.

Subject Areas: Physics

Instruments: I19-Small Molecule Single Crystal Diffraction

Added On: 26/10/2015 19:58

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