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Probing Defects in a Small Pixellated CdTe Sensor Using an Inclined Mono Energetic X-Ray Micro Beam

DOI: 10.1109/TNS.2013.2257851 DOI Help

Authors: E Frojdh (Mid Sweden University) , C. Frojdh (Mid Sweden University) , E Gimenez-navarro (Diamond Light Source) , D. Krapohl (Mid Sweden University) , D. Maneuski (University of Glasgow) , B. Norlin (Mid Sweden University) , V. O'shea (University of Glasgow) , H Wilhelm (Diamond Light Source) , N Tartoni (Diamond Light Source) , G. Thungstrom (Mid Sweden University) , R. M. Zain (University of Glasgow)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Ieee Transactions On Nuclear Science , VOL 60 (4) , PAGES 2864 - 2869

State: Published (Approved)
Published: April 2013

Abstract: High quantum efficiency is important in X-ray imaging applications. This means using high-Z sensor materials. Unfortunately many of these materials suffer from defects that cause non-ideal charge transport. In order to increase the understanding of these defects, we have mapped the 3D response of a number of defects in two 1 mm thick CdTe sensors with ifferent pixel sizes (55 m and 110 m) using a monoenergetic microbeam at 79 keV. The sensors were bump bonded to Timepix read out chips. Data was collected in photon counting as well as time-over-thresholdmode. The time-over-thresholdmode is a very powerful tool to investigate charge transport properties and fluorescence in pixellated detectors since the signal from the charge that each photon deposits in each pixel can be analyzed. Results show distorted electrical field around the defects, indications of excess leakage current and large differences in behavior between electron collection and hole collection mode. The experiments were carried out on the Extreme onditions Beamline I15 at Diamond Light Source.

Subject Areas: Physics


Instruments: I15-Extreme Conditions

Added On: 23/11/2015 15:41

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