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Simulation of active-edge pixelated CdTe radiation detectors

DOI: 10.1016/j.nima.2015.09.087 DOI Help

Authors: D. D. Duarte (STFC Rutherford Appleton Laboratory) , J. D. Lipp (STFC Rutherford Appleton Laboratory) , A. Schneider (STFC Rutherford Appleton Laboratory) , P. Seller (STFC Rutherford Appleton Laboratory) , M. C. Veale (STFC Rutherford Appleton Laboratory) , M. D. Wilson (STFC Rutherford Appleton Laboratory) , M. A. Baker (University of Surrey) , P. J. Sellin (University of Surrey)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nuclear Instruments And Methods In Physics Research Section A: Accelerators, Spectrometers, Detectors And Associated Equipment , VOL 806 , PAGES 139 - 145

State: Published (Approved)
Published: January 2016

Open Access Open Access

Abstract: The edge surfaces of single crystal CdTe play an important role in the electronic properties and performance of this material as an X-ray and γ-ray radiation detector. Edge effects have previously been reported to reduce the spectroscopic performance of the edge pixels in pixelated CdTe radiation detectors without guard bands. A novel Technology Computer Aided Design (TCAD) model based on experimental data has been developed to investigate these effects. The results presented in this paper show how localized low resistivity surfaces modify the internal electric field of CdTe creating potential wells. These result in a reduction of charge collection efficiency of the edge pixels, which compares well with experimental data.

Journal Keywords: Cadmium Telluride; Edge Effect; Pixel Detector; Semiconductor Radiation Detector; Surface Characterization; Tcad Simulation

Subject Areas: Biology and Bio-materials


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