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Control of Magnetization-Reversal Mechanism via Uniaxial Anisotropy Strength in

DOI: 10.1103/PhysRevApplied.4.064004 DOI Help

Authors: L. C. Phillips (University of Cambridge) , W. Yan (University of Cambridge) , X. Moya (University of Cambridge) , M. Ghidini (University of Cambridge) , F. Maccherozzi (Diamond Light Source) , S. S. Dhesi (Diamond Light Source) , N. D. Mathur (University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Applied , VOL 4

State: Published (Approved)
Published: December 2015

Abstract: Spintronic device performance depends critically on magnetization reversal mechanisms, but these are rarely imaged in order to verify correct operation. Here we use magnetometry and magnetic imaging to study thin films and patterned elements of highly spin-polarized La0.67Sr0.33MnO3 grown epitaxially on NdGaO3 substrates whose crystallographic orientation determines magnetic anisotropy strength. Small anisotropy yields gradual magnetization reversal via nucleation and propagation of small-needle domains, whereas large anisotropy yields a single nucleation event resulting in sharp and complete magnetization reversal.We explain these observed differences using micromagnetic simulations, and exploit them in order to quantify the effect of La0.67Sr0.33MnO3 electrode behavior on spin signals from hypothetical devices. Our work, therefore, highlights the dramatic discrepancies that can arise between the design and performance of spintronic devices.

Subject Areas: Physics


Instruments: I06-Nanoscience