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Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

DOI: 10.1002/pssb.200565294 DOI Help

Authors: M. Drakopoulos (Diamond Light Source) , M. Laügt (CRHEA-CNRS) , T. Riemann (University of Magdeburg) , B. Beaumont (Chemin de Saint Bernard) , P. Gibart (CRHEA-CNRS)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physica Status Solidi (b) , VOL 243 (7) , PAGES 1545-1550

State: Published (Approved)
Published: June 2006

Abstract: Epitaxial Lateral Overgrowth (ELO) has proven to be an efficient technology to significantly decrease the density of extended defects in the 10(7) cm(-2) ranges. In the present work, called the two-step-ELO (2S-ELO) process, only the coalescence boundaries are defective. In addition in this 2S-ELO modification, the tilt angle between the two laterally overgrowing wings was found to be negligible. The thickness dependence of the crystal quality of an ELO GaN/sapphire was investigated using a 50 x 0.5 mu m X-ray focused beam of the ESRF synchrotron storage ring. Micro diffraction allows following the mechanism of reduction of the density of extended defects. It is evidenced that no tilt occurs during the 2S-ELO process.

Journal Keywords: 61.10.Nz; 61.72.Ff; 68.55.Ln; 81.05.Ea; 81.15.Kk

Subject Areas: Physics


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