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Simulation and test of 3D silicon radiation detectors

DOI: 10.1016/j.nima.2007.05.263 DOI Help

Authors: C. Fleta (University of Glasgow) , D. Pennicard (University of Glasgow) , R. Bates (SUPA School of Physics and Astronomy, University of Glasgow) , C. Parkes (University of Glasgow) , G. Pellegrini (Centro Nacional de Microelectrónica) , M. Lozano (Centro Nacional de Microelectrónica) , V. Wright (Diamond Light Source) , M. Boscardin (ITC-IRST) , G F Dalla Betta (ITC-IRST) , C. Piemonte (ITC-IRST) , A. Pozza (ITC-IRST) , S. Ronchin (ITC-IRST) , N. Zorzi (ITC-IRST)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nuclear Instruments And Methods In Physics Research Section A: Accelerators, Spectrometers, Detectors And Associated Equipment , VOL 579 (2) , PAGES 642 - 647

State: Published (Approved)
Published: September 2007

Abstract: The work presented here is the result of the collaborative effort between the University of Glasgow, ITC-IRST (Trento) and IMB-CNM (Barcelona) in the framework of the CERN-RD50 Collaboration to produce 3D silicon radiation detectors and study their performance. This paper reports on two sets of 3D devices. IRST and CNM have fabricated a set of single-type column 3D detectors, which have columnar electrodes of the same doping type and an ohmic contact located at the backplane. Simulations of the device behaviour and electrical test results are presented. In particular, current–voltage, capacitance–voltage and charge collection efficiency measurements are reported. Other types of structures called double-sided 3D detectors are currently being fabricated at CNM. In these detectors the sets of n and p columns are made on opposite sides of the device. Electrical and technological simulations and first processing results are presented.

Journal Keywords: Capacitance; Cern; Charge Collection; Efficiency; Electric Potential; Electrodes; Equipment; Performance; Si Semiconductor Detectors; Simulation

Subject Areas: Physics


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