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Bonding of Single Crystal Silicon to Cu and AlN: Trial Results

DOI: 10.1179/174329308X319208 DOI Help

Authors: T. Connolley (Diamond Light Source) , S. Hanks (Special Techniques Group, Culham) , M. Drakopoulos (Diamond Light Source) , T. Hill (Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Science And Technology Of Welding And Joining , VOL 14 (1) , PAGES 1-3

State: Published (Approved)
Published: January 2009

Abstract: Tests were performed to assess the feasibility of bonding single crystal silicon to copper and aluminium nitride. The application of the bonded component is in a cryocooled monochromator for synchrotron X-ray optics. Aluminium, gold and indium–silver interlayers were tried. Some bonded components were tested by immersion in liquid nitrogen to simulate cooling of the component in service. Although bonds could be formed, they were of insufficient integrity for use in a challenging cryogenic application.

Journal Keywords: Diffusion Bonding; Vacuum Brazing; Eutectic Bonding; Single Crystal Silicon; Aluminium Nitride

Subject Areas: Engineering, Materials, Technique Development

Technical Areas: Mechanical Engineering

Added On: 20/04/2010 11:01

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