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Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor
Authors:
Gerardo
Algara-siller
(Universität Ulm)
,
Nikolai
Severin
(Humboldt-Universität zu Berlin)
,
Sam
Chong
(University of Liverpool)
,
Torbjörn
Björkman
(Aalto University)
,
Robert
Palgrave
(University College London)
,
Andrea
Laybourn
(University of Liverpool)
,
Markus
Antonietti
(Max Planck Institute of Colloids and Interfaces)
,
Yaroslav Z.
Khimyak
(University of Liverpool)
,
Arkady V.
Krasheninnikov
(Aalto University)
,
Jürgen P.
Rabe
(Humboldt-Universität zu Berlin)
,
Ute
Kaiser
(Universität Ulm)
,
Andrew I.
Cooper
(University of Liverpool)
,
Arne
Thomas
(Technische Universität Berlin)
,
Michael
Bojdys
(University of Liverpool)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Angewandte Chemie
, VOL 126 (29)
, PAGES 7580 - 7585
State:
Published (Approved)
Published:
July 2014
Abstract: Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0?eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.
Subject Areas:
Chemistry
Instruments:
I11-High Resolution Powder Diffraction