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Structural and Electronic Properties of Nitrogen-Doped Graphene

DOI: 10.1103/PhysRevLett.116.126805 DOI Help

Authors: J. Sforzini (Forschungszentrum Jülich GmbH) , P. Hapala (Institute of Physics of the Czech Academy of Sciences) , M. Franke (Forschungszentrum Jülich GmbH) , G. Van Straaten (Forschungszentrum Jülich GmbH) , A. Stöhr (Max Planck Institute for Solid State Research) , S. Link (Max-Planck-Institute) , S. Soubatch (Forschungszentrum Jülich GmbH) , P. Jelínek (Institute of Physics of the Czech Academy of Sciences) , T.-l. Lee (Diamond Light Source) , U. Starke (Max Planck Institute for Solid State Research) , M. Švec (Institute of Physics of the Czech Academy of Sciences) , F. Bocquet (Forschungszentrum Jülich GmbH) , S. Tautz (Forschungszentrum Jülich GmbH)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Letters , VOL 116

State: Published (Approved)
Published: March 2016
Diamond Proposal Number(s): 10271

Open Access Open Access

Abstract: We investigate the structural and electronic properties of nitrogen-doped epitaxial monolayer graphene and quasifreestanding monolayer graphene on 6H-SiCð0001Þ by the normal incidence x-ray standing wave technique and by angle-resolved photoelectron spectroscopy supported by density functional theory simulations. With the location of various nitrogen species uniquely identified, we observe that for the same doping procedure, the graphene support, consisting of substrate and interface, strongly influences the structural as well as the electronic properties of the resulting doped graphene layer. Compared to epitaxial graphene, quasifreestanding graphene is found to contain fewer nitrogen dopants. However, this lack of dopants is compensated by the proximity of nitrogen atoms at the interface that yield a similar number of charge carriers in graphene.

Subject Areas: Physics


Instruments: I09-Surface and Interface Structural Analysis