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Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction

DOI: 10.1016/j.matdes.2016.04.078 DOI Help

Authors: Gerard Colston (University of Warwick) , Stephen Rhead (University of Warwick) , Vishal A. Shah (University of Warwick) , Oliver Newell (University of Warwick) , Igor Dolbnya (Diamond Light Source) , David R. Leadley (University of Warwick) , Maksym Myronov (University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Materials & Design , VOL 103 , PAGES 244 - 248

State: Published (Approved)
Published: August 2016
Diamond Proposal Number(s): 11773 , 10303

Abstract: Micro X-ray diffraction (μ-XRD) has been used to map the strain profile of a suspended crystalline cubic Silicon Carbide (3C-SiC) square membrane. While the presence of crystal defects in the 3C-SiC epilayer induces significant errors on the position of the 3C-SiC Bragg peaks, relaxation from residual tensile strain can be observed and directly quantified from the XRD measurements. The advantage of μ-XRD over other strain mapping techniques is that the tilt of the crystalline layers can be measured simultaneously with the lattice parameters. Significant tilt variations have been observed at the corner of the 3C-SiC membrane, implying that the undercut from chemical etching induces distortions in the crystal structure. These distortions are likely to be the cause of the increase in strain commonly observed at the edges of suspended structures using the micro-Raman shift strain mapping technique.

Journal Keywords: 3C-SiC; Membrane; Strain; Tilt; XRD

Subject Areas: Materials, Engineering


Instruments: B16-Test Beamline

Added On: 20/05/2016 19:30

Discipline Tags:

Materials Engineering & Processes Materials Science Engineering & Technology

Technical Tags:

Diffraction microXRD