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Twinning in vapour-grown, large volume Cd1−xZnxTe crystals

DOI: 10.1016/j.jcrysgro.2016.05.011 DOI Help

Authors: Brian Tanner (University of Durham) , John Mullins (Kromek Ltd) , Alexander Pym (Kromek Ltd) , Dzmitry Maneuski (University of Glasgow)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Crystal Growth , VOL 448 , PAGES 44 - 50

State: Published (Approved)
Published: August 2016

Abstract: The onset of twinning from View the MathML source to View the MathML source in large volume Cd1−xZnx Te crystals, grown by vapour transport on View the MathML source, often referred to as (211)B, oriented GaAs seeds, has been investigated using X-ray diffraction imaging (X-ray topography). Twinning is not associated with strains at the GaAs/CdTe interface as the initial growth was always in View the MathML source orientation. Nor is twinning related to lattice strains associated with injection of Zn subsequent to initial nucleation and growth of pure CdTe as in both cases twinning occurred after growth of several mm length of Cd1−xZnxTe. While in both cases examined, there was a region of disturbed growth prior to the twinning transition, in neither crystal does this strain appear to have nucleated the twinning process. In both cases, un-twinned material remained after twinning was observed, the scale of the resulting twin boundaries being sub-micron. Simultaneous twinning across the whole sample surface was observed in one sample, whereas in the other, twinning was nucleated at different points and times in the growth.

Journal Keywords: X-ray topography; Growth from vapour; Tellurides; Semiconducting II-VI materials

Diamond Keywords: Semiconducting

Subject Areas: Physics, Materials

Instruments: B16-Test Beamline

Added On: 21/05/2016 17:30

Discipline Tags:

Detectors Physics Materials Science Engineering & Technology

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