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Microstructure and Compositional Defects Affects Proton Conductivity and Reactions in Y-doped BaZrO3 Thin Films

DOI: 10.1149/07207.0149ecst DOI Help

Authors: N. Yang (CNR-SPIN) , E. Di Bartolomeo (University of Rome Tor Vergata) , V. Foglietti (CNR-SPIN) , C. Cantoni (Oak Ridge National Laboratory) , A. Belianinov (Oak Ridge National Laboratory) , A. Tebano (University of Rome Tor Vergata) , S. Licoccia (University of Rome) , T- L Lee (Diamond Light Source) , C. Schlueter (Diamond Light Source) , S. V. Kalinin (Oak Ridge National Laboratory) , G. Balestrino (University of Rome Tor Vergata) , C. Aruta (CNR-SPIN)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Ecs Transactions , VOL 72 , PAGES 149 - 158

State: Published (Approved)
Published: May 2016

Abstract: In this paper, we report on BaZr0.8Y0.2O3-x (BZY) thin films grown on highly mismatched NdGaO3 (110) substrates by RHEED assisted pulsed laser deposition. The conduction and electrochemical performances are studied by Electrochemical Impedance Spectroscopy and Electrochemical Strain Microscopy respectively. Conductivity, as well as electrochemical response improves while decreasing the thickness, indicating that the proton movement is prompt at the defective interface region. Structural defects at the interface between film and substrate are clearly displayed by x-ray diffraction, RHEED patterns and transmission electron microscopy. The role of chemical defects on BZY film properties is elucidated by Hard X-ray Photoelectron Spectroscopy. Our results demonstrate that both structural dislocations and chemical defects influence the proton conduction and reaction process in BZY thin films.

Subject Areas: Materials


Instruments: I09-Surface and Interface Structural Analysis