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Long Spin Diffusion Length in Few-Layer Graphene Flakes

DOI: 10.1103/PhysRevLett.117.147201 DOI Help

Authors: W. Yan (Department of Materials Science, University of Cambridge) , L. C. Phillips (Department of Materials Science, University of Cambridge) , M. Barbone (Cambridge Graphene Centre, University of Cambridge) , S. J. Hämäläinen (NanoSpin, Department of Applied Physics, Aalto University School of Science) , A. Lombardo (Cambridge Graphene Centre, University of Cambridge) , M. Ghidini (University of Cambridge; DiFeST, University of Parma) , Xavier Moya (University of Cambridge) , F. Maccherozzi (Diamond Light Source) , S. Van Dijken (NanoSpin, Department of Applied Physics, Aalto University School of Science) , S. S. Dhesi (Diamond Light Source) , A. C. Ferrari (Cambridge Graphene Centre, University of Cambridge) , N. D. Mathur (University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Letters , VOL 117

State: Published (Approved)
Published: September 2016
Diamond Proposal Number(s): 1773 , 6249 , 8325

Abstract: We report a spin valve with a few-layer graphene flake bridging highly spin-polarized La0.67Sr0.33MnO3 electrodes, whose surfaces are kept clean during lithographic definition. Sharp magnetic switching is verified using photoemission electron microscopy with x-ray magnetic circular dichroism contrast. A naturally occurring high interfacial resistance ∼12  MΩ facilitates spin injection, and a large resistive switching (0.8  MΩ at 10 K) implies a 70–130  μm spin diffusion length that exceeds previous values obtained with sharp-switching electrodes.

Subject Areas: Materials, Physics


Instruments: I06-Nanoscience

Added On: 12/10/2016 09:38

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