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A single-source precursor approach to solution processed indium arsenide thin films

DOI: 10.1039/C6TC02293F DOI Help

Authors: Peter Marchand (Materials Chemistry Centre, Department of Chemistry, University College London) , Sanjayan Sathasivam (Materials Chemistry Centre, Department of Chemistry, University College London; Bio Nano Consulting Ltd) , Benjamin A. D. Williamson (Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London) , David Pugh (Department of Chemistry, Imperial College London) , Salem M. Bawaked (King Abdulaziz University;) , Sulaiman N. Basahel (King Abdulaziz University) , Abdullah Y. Obaid (King Abdulaziz University) , David O. Scanlon (University College London; Diamond Light Source) , Ivan P. Parkin (University College London) , Claire J. Carmalt (Materials Chemistry Centre, Department of Chemistry, University College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: J. Mater. Chem. C , VOL 4 , PAGES 6761 - 6768

State: Published (Approved)
Published: June 2016

Open Access Open Access

Abstract: This paper reports the synthesis of the novel single-source precursor, [{(MeInAstBu)3}2(Me2InAs(tBu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10−3 Ω cm) and carrier mobility (410 cm2 V−1 s−1) values despite growth on amorphous glass substrates.

Subject Areas: Chemistry, Materials


Technical Areas: