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High Open-Circuit Voltages in Tin-Rich Low-Bandgap Perovskite-Based Planar Heterojunction Photovoltaics

DOI: 10.1002/adma.201604744 DOI Help

Authors: Baodan Zhao (Cavendish Laboratory, University of Cambridge) , Mojtaba Abdi-jalebi (Cavendish Laboratory, University of Cambridge) , Maxim Tabachnyk (Cavendish Laboratory, University of Cambridge) , Hugh Glass (Cavendish Laboratory, University of Cambridge) , Varun S. Kamboj (Cavendish Laboratory, University of Cambridge) , Wanyi Andrew Nie (Los Alamos National Laboratory) , J. Pearson (Cavendish Laboratory, University of Cambridge) , Yuttapoom Puttisong (Cavendish Laboratory, University of Cambridge) , Karl C. Gödel (Cavendish Laboratory, University of Cambridge) , Harvey E. Beere (Cavendish Laboratory, University of Cambridge) , David A. Ritchie (Cavendish Laboratory, University of Cambridge) , Aditya D. Mohite (Los Alamos National Laboratory) , Sian E. Dutton (Cavendish Laboratory, University of Cambridge) , Richard H. Friend (Cavendish Laboratory, University of Cambridge) , Aditya Sadhanala (Cavendish Laboratory, University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Materials

State: Published (Approved)
Published: November 2016
Diamond Proposal Number(s): 12436

Open Access Open Access

Abstract: Low-bandgap CH3NH3(Pb x Sn1– x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties have been fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1 s−1) intrinsic carrier mobilities.

Journal Keywords: high mobility perovskites; lead–tin perovskite PV; low-bandgap perovskites; Urbach energy

Subject Areas: Materials, Physics


Instruments: I07-Surface & interface diffraction

Documents:
Zhao_et_al-2016-Advanced_Materials.pdf