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Optical switching in VO2 films by below-gap excitation

DOI: 10.1063/1.2921784 DOI Help

Authors: M. Rini (Lawrence Berkeley National Laboratory, Berkeley) , Z. Hao (Lawrence Berkeley National Laboratory, Berkeley) , R. W. Schoenlein (Lawrence Berkeley National Laboratory, Berkeley) , C. Giannetti (Universita' Cattolica del Sacro Cuore) , S. Fourmaux (Université du Québec, Canada) , J. C. Kieffer (Université du Québec, Canada) , A. Fujimori (University of Tokyo) , M. Onoda (University of Tsukuba) , S. Wall (University of Oxford) , A. Cavalleri (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 92 (18)

State: Published (Approved)
Published: May 2008

Abstract: We study the photoinduced insulator-metal transition in VO2, correlating its threshold and dynamics with excitation wavelength. In single crystals, switching can only be induced with photon energies above the 670 meV gap. This contrasts with the case of polycrystalline films, where formation of the metallic state can be initiated also with photon energies as low as 180 meV, which are well below the bandgap. Perfection of this process may become conducive to schemes for optical switches, limiters, and detectors operating at room temperature in the mid-infrared.

Journal Keywords: Photons; Single crystals; Insulating thin films; Phase transitions; Polycrystals

Subject Areas: Materials, Physics


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