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Kinetic phase diagram for island nucleation and growth during homoepitaxy

DOI: 10.1103/PhysRevB.77.075427 DOI Help

Authors: M. Basham (Diamond Light Source) , P. A. Mulheran (University of Strathclyde)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 77 (7)

State: Published (Approved)
Published: February 2008

Abstract: The impact of small-island dissociation and mobility on island nucleation and growth during vapour deposition of this films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/disposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expression for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.

Subject Areas: Chemistry

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