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Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs

DOI: 10.1103/PhysRevLett.118.057701 DOI Help

Authors: M. J. Grzybowski (University of Nottingham; Polish Academy of Sciences) , P. Wadley (University of Nottingham) , K. W. Edmonds (University of Nottingham) , R. Beardsley (University of Nottingham) , V. Hills (University of Nottingham) , R. P. Campion (University of Nottingham) , B. L. Gallagher (University of Nottingham) , J. S. Chauhan (University of Nottingham) , V. Novak (Academy of Sciences of the Czech Republic) , T. Jungwirth (Academy of Sciences of the Czech Republic; University of Nottingham) , F. Maccherozzi (Diamond Light Source) , S. S. Dhesi (Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Letters , VOL 118

State: Published (Approved)
Published: February 2017
Diamond Proposal Number(s): 12504

Abstract: The magnetic order in antiferromagnetic materials is hard to control with external magnetic fields. Using x-ray magnetic linear dichroism microscopy, we show that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film. A clear correlation between the average domain orientation and the anisotropy of the electrical resistance is demonstrated, with both showing reproducible switching in response to orthogonally applied current pulses. However, the behavior is inhomogeneous at the submicron level, highlighting the complex nature of the switching process in multidomain antiferromagnetic films.

Subject Areas: Materials, Physics


Instruments: I06-Nanoscience

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