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Tm 3 Fe 5 O 12 /Pt Heterostructures with Perpendicular Magnetic Anisotropy for Spintronic Applications

DOI: 10.1002/aelm.201600376 DOI Help

Authors: Andy Quindeau (Massachusetts Institute of Technology) , Can O. Avci (Massachusetts Institute of Technology) , Wenqing Liu (University of York; University of Cambridge) , Congli Sun (University of Wisconsin-Madison) , Maxwell Mann (Massachusetts Institute of Technology) , Astera S. Tang (Massachusetts Institute of Technology) , Mehmet C. Onbasli (Massachusetts Institute of Technology) , David Bono (Massachusetts Institute of Technology) , Paul M. Voyles (University of Wisconsin-Madison) , Yongbing Xu (University of York) , Jason Robinson (University of Cambridge) , Geoffrey S. D. Beach (Massachusetts Institute of Technology) , Caroline A. Ross (Massachusetts Institute of Technology)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Electronic Materials , VOL 3

State: Published (Approved)
Published: January 2017
Diamond Proposal Number(s): 12664

Abstract: With recent developments in the field of spintronics, ferromagnetic insulator (FMI) thin films have emerged as an important component of spintronic devices. Ferrimagnetic yttrium iron garnet in particular is an excellent insulator with low Gilbert damping and a Curie temperature well above room temperature, and has been incorporated into heterostructures that exhibit a plethora of spintronic phenomena including spin pumping, spin Seebeck, and proximity effects. However, it has been a challenge to develop high quality sub-10 nm thickness FMI garnet films with perpendicular magnetic anisotropy (PMA) and PMA garnet/heavy metal heterostructures to facilitate advances in spin-current and anomalous Hall phenomena. Here, robust PMA in ultrathin thulium iron garnet (TmIG) films of high structural quality down to a thickness of 5.6 nm are demonstrated, which retain a saturation magnetization close to bulk. It is shown that TmIG/Pt bilayers exhibit a large spin Hall magnetoresistance (SMR) and SMR-driven anomalous Hall effect, which indicates efficient spin transmission across the TmIG/Pt interface. These measurements are used to quantify the interfacial spin mixing conductance in TmIG/Pt and the temperature-dependent PMA of the TmIG thin film.

Journal Keywords: anomalous Hall effect; magnetic anisotropy; perpendicular magnetic insulators; spintronics; thulium iron garnet

Subject Areas: Materials, Physics


Instruments: I06-Nanoscience

Added On: 08/02/2017 13:12

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