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Mapping the strain state of 3C-SiC/Si (001) suspended structures using μ-XRD

DOI: 10.4028/www.scientific.net/MSF.858.274 DOI Help

Authors: Gerard Colston (The University of Warwick) , Stephen D. Rhead (The University of Warwick) , Vishal A. Shah (The University of Warwick) , Oliver J. Newell (The University of Warwick) , Igor P. Dolbnya (Diamond Light Source) , David R. Leadley (The University of Warwick) , Maksym Myronov (The University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Materials Science Forum , VOL 858 , PAGES 274 - 277

State: Published (Approved)
Published: May 2016
Diamond Proposal Number(s): 11773

Abstract: The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps were acquired by calculating the residual strain from the shift in 3C-SiC Raman peaks. Comparable trends in strain relaxation are observed by both methods, although the sensitivity of μ-XRD is higher using our measurement conditions. While Raman shift provides a fast and convenient method for mapping strain variations, it cannot give direct measurements of the lattice parameters that can be achieved with μ-XRD, making these techniques excellent complimentary methods of mapping residual strain in 3C-SiC.

Journal Keywords: 3C-SiC; XRD; Raman; Membrane; Suspended; Strain

Subject Areas: Materials


Instruments: B16-Test Beamline

Added On: 13/04/2017 10:40

Discipline Tags:

Materials Science

Technical Tags:

Diffraction microXRD