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Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from K-edge x-ray magnetic circular dichroism

DOI: 10.1103/PhysRevB.81.235208 DOI Help

Authors: P. Wadley (School of Physics and Astronomy, University of Nottingham) , A. A. Freeman (Diamond Light Source) , Ke. W. Edmonds (School of Physics and Astronomy, University of Nottingham) , G. Van Der Laan (Diamond Light Source) , J. S. Chauhan (School of Physics and Astronomy, University of Nottingham) , R. P. Campion (School of Physics and Astronomy, University of Nottingham) , A. W. Rushforth (School of Physics and Astronomy, University of Nottingham) , B. L. Gallagher (School of Physics and Astronomy, University of Nottingham) , C. T. Foxon (School of Physics and Astronomy, University of Nottingham) , F. Wilhelm (European Synchrotron Radiation Facility) , A. G. Smekhova (European Synchrotron Radiation Facility) , A. Rogalev (European Synchrotron Radiation Facility)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 81 (23)

State: Published (Approved)
Published: January 2010

Abstract: Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.

Subject Areas: Physics


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