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Engineering Valence Band Dispersion for High Mobility p-Type Semiconductors

DOI: 10.1021/acs.chemmater.6b03306 DOI Help

Authors: Benjamin A. D. Williamson (University College London) , John Buckeridge (University College London) , Jennilee Brown (University College London) , Simon Ansbro (University College London) , Robert G. Palgrave (University College London (UCL)) , David O. Scanlon (University College London; Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Chemistry Of Materials , VOL 29 , PAGES 2402 - 2413

State: Published (Approved)
Published: January 2017

Open Access Open Access

Abstract: The paucity of high performance transparent p-type semiconductors has been a stumbling block for the electronics industry for decades, effectively hindering the route to efficient transparent devices based on p–n junctions. Cu-based oxides and subsequently Cu-based oxychalcogenides have been heavily studied as affordable, earth-abundant p-type transparent semiconductors, where the mixing of the Cu 3d states with the chalcogenide 2p states at the top of the valence band encourages increased valence band dispersion. In this article, we extend this mixing concept further, by utilizing quantum chemistry techniques to investigate ternary copper phosphides as potential high mobility p-type materials. We use hybrid density functional theory to examine a family of phosphides, namely, MCuP (M = Mg, Ca, Sr, Ba) which all possess extremely disperse valence band maxima, comparable to the dispersion of excellent industry standard n-type transparent conducting oxides. As a proof of concept, we synthesized and characterized powders of CaCuP, showing that they display high levels of p-type conductivity, without any external acceptor dopant. Lastly, we discuss the role of Cu-coordination in promoting valence band dispersion and provide design principles for producing degenerate p-type materials.

Subject Areas: Materials, Physics

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Added On: 11/09/2017 16:29


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