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Pr[sub 2]O[sub 3] on Si(001): A commensurate interfacial layer overgrown by silicate

DOI: 10.1063/1.2743945 DOI Help

Authors: L. Libralesso (ESRF, France) , T.-l. Lee (Diamond Light Source) , J. Zegenhagen (ESRF, France)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 90 (22)

State: Published (Approved)
Published: May 2007

Abstract: The growth of Pr2O3 on Si(001) for film thicknesses up to 3 nm was studied in situ in ultrahigh vacuum without exposure to ambient by x-ray reflectivity, grazing incident x-ray diffraction, and angle-resolved x-ray photoelectron spectroscopy using synchrotron radiation. The electron density and chemical composition profiles as well as the in-plane superstructure deduced from the present analysis reveal the development of a 0.5 nm thick transition layer at the interface that exhibits a cubic Pr2O3 structure and is commensurate to the Si substrate. This layer is overgrown by disordered Pr silicate.

Journal Keywords: Ozone; Interface structure; Reflectivity; X-ray photoelectron spectroscopy; Crystal structure

Subject Areas: Physics

Facility: ESRF