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Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO3 heterostructures

DOI: 10.1038/s41467-017-01581-6 DOI Help

Authors: W. Saenrang (University of Wisconsin-Madison) , B. A. Davidson (University of Wisconsin-Madison; TASC National Laboratory) , F. Maccherozzi (Diamond Light Source) , J. P. Podkaminer (University of Wisconsin-Madison) , J. Irwin (University of Wisconsin-Madison) , R. D. Johnson (University of Oxford; ISIS Facility) , J. W. Freeland (Advanced Photon Source) , J. Íñiguez (Luxembourg Institute of Science and Technology) , J. L. Schad (University of Wisconsin-Madison) , K. Reierson (University of Wisconsin-Madison) , J. C. Frederick (University of Wisconsin-Madison) , C. A. F. Vaz (Swiss Light Source) , L. Howald (Swiss Light Source) , T. H. Kim (University of Wisconsin-Madison) , S. Ryu (University of Wisconsin-Madison) , M. V. Veenendaal (Advanced Photon Source; Northern Illinois University) , P. G. Radaelli (University of Oxford) , S. S. Dhesi (Diamond Light Source) , M. S. Rzchowski (University of Wisconsin-Madison) , C. B. Eom (University of Wisconsin-Madison)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature Communications , VOL 8

State: Published (Approved)
Published: November 2017
Diamond Proposal Number(s): 12084 , 13225 , 11589

Open Access Open Access

Abstract: Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO3 films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed, with ~ 90° in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. This has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO3.

Journal Keywords: Electronic devices; Ferroelectrics and multiferroics

Subject Areas: Materials, Physics


Instruments: I06-Nanoscience

Added On: 20/11/2017 10:00

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