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Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

DOI: 10.3390/cryst7110347 DOI Help

Authors: Brian K. Tanner (Durham University) , David Allen (I.T. Carlow) , Jochen Wittge (Straumann GmbH) , Dany Danilewsky (University of Freiburg) , Jorge Garagorri (CEIT and Tecnun (University of Navarra)) , Eider Gorostegui-colinas (Lortek) , M. Reyes Elizalde (CEIT and Tecnun (University of Navarra)) , Patrick J. Mcnally (Dublin City University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Crystals , VOL 7

State: Published (Approved)
Published: November 2017
Diamond Proposal Number(s): 6257 , 3232

Open Access Open Access

Abstract: The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a few micrometres of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometres. For example, Raman data provide an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimetre length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometres of the bevel edge of 200 mm diameter wafers.

Journal Keywords: X-ray diffraction imaging; Raman spectroscopy; indentation geometry; plastic deformation; crack generation; plastic deformation strain imaging

Subject Areas: Physics

Instruments: B16-Test Beamline