In-situ observation of stacking fault evolution in vacuum-deposited C60

DOI: 10.1063/1.4995571

Authors: J. F. M. Martinez Hardigree (University of Oxford) , I. R. Ramirez (University of Oxford) , G. Mazzotta (University of Oxford) , C. Nicklin (Diamond Light Source) , M. Riede (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 111

State: Published (Approved)
Published: December 2017
Diamond Proposal Number(s): 15207

Abstract: We report an in-situ study of stacking fault evolution in C60 thin films using grazing-incidence x-ray scattering. A Williamson-Hall analysis of the main scattering features during growth of a 15 nm film on glass indicates lattice strain as high as 6% in the first 5 nm of the film, with a decrease to 2% beyond 8 nm thickness. Deformation stacking faults along the {220} plane are found to occur with 68% probability and closely linked to the formation of a nanocrystalline powder-like film. Our findings, which capture monolayer-resolution growth, are consistent with previous work on crystalline and powder C60 films, and provide a crystallographic context for the real-time study of organic semiconductor thin films.

Journal Keywords: Thin film deposition; Crystal defects; X-ray scattering; Nanomaterials; Fullerenes

Diamond Keywords: Semiconductors

Subject Areas: Physics


Instruments: I07-Surface & interface diffraction

Added On: 13/12/2017 13:40

Discipline Tags:

Surfaces Physics Electronics interfaces and thin films

Technical Tags:

Scattering Small Angle X-ray Scattering (SAXS) Grazing Incidence Small Angle Scattering (GISAXS)