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Bottom-Up Fabrication of Semiconductive Metal-Organic Framework Ultrathin Films

DOI: 10.1002/adma.201704291 DOI Help

Authors: Víctor Rubio-giménez (Universitat de València) , Marta Galbiati (Universitat de València) , Javier Castells-gil (Universitat de València) , Neyvis Almora-barrios (Universitat de València) , José Navarro-sánchez (Universitat de València) , Garin Escorcia-ariza (Universitat de València) , Michele Mattera (University of Valencia) , Thomas Arnold (Diamond Light Source) , Jonathan Rawle (Diamond Light Source) , Sergio Tatay (University of Valencia) , Eugenio Coronado (Universitat de València) , Carlos Marti-gastaldo (University of Valencia)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Materials , VOL 55

State: Published (Approved)
Published: January 2018
Diamond Proposal Number(s): 14495

Abstract: Though generally considered insulating, recent progress on the discovery of conductive porous metal–organic frameworks (MOFs) offers new opportunities for their integration as electroactive components in electronic devices. Compared to classical semiconductors, these metal–organic hybrids combine the crystallinity of inorganic materials with easier chemical functionalization and processability. Still, future development depends on the ability to produce high-quality films with fine control over their orientation, crystallinity, homogeneity, and thickness. Here self-assembled monolayer substrate modification and bottom-up techniques are used to produce preferentially oriented, ultrathin, conductive films of Cu-CAT-1. The approach permits to fabricate and study the electrical response of MOF-based devices incorporating the thinnest MOF film reported thus far (10 nm thick).

Subject Areas: Chemistry


Instruments: I07-Surface & interface diffraction

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