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Effective attenuation length of keV photoelectrons in silicon measured by transmission through thin membranes

DOI: 10.1016/j.elspec.2018.03.003 DOI Help

Authors: Vladyslav Solokha (Diamond Light Source; Johannes Kepler Universität Linz) , Tien-lin Lee (Diamond Light Source) , Axel Wilson (Diamond Light Source) , Kurt Hingerl (Johannes Kepler Universität Linz) , Jorg Zegenhagen (Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Electron Spectroscopy And Related Phenomena

State: Published (Approved)
Published: March 2018
Diamond Proposal Number(s): 15716

Open Access Open Access

Abstract: We use 9 nm and 15 nm thin membranes for determining the effective attenuation length of photoelectrons in silicon. One side of silicon membranes was covered with a thin film of aluminium and exposed to X-rays with energies from 3 to 8 keV. We recorded Al 1s and 2s photoelectrons that were (a) emitted from the Al film directly and (b) transmitted through the membranes. With the help of the ratio of both yields, we obtained values for the effective attenuation length (EAL) of electrons with kinetic energies up to 7.9 keV in silicon. The experimentally determined EAL values are smaller than obtained from different predictive equations. Using a power law fit View the MathML sourceEAL(k,p)=kEkinp to the experimental and predicted EAL values we find that mainly different is the pre-factor of the power law, k, while the exponent, i.e. the dependence on kinetic energy Ekin is represented well. Our study underlines the feasibility of using membranes for investigating surfaces under (near) ambient pressure conditions by photoelectron spectroscopy and points out the advantages of employing hard X-rays.

Journal Keywords: photoelectron spectroscopy; effective attenuation length; membranes; thin films; synchrotron radiation; X-rays

Subject Areas: Physics, Technique Development


Instruments: I09-Surface and Interface Structural Analysis

Documents:
1-s2.0-S0368204817302724-main.pdf