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Direct demonstration of the emergent magnetism resulting from the multivalence Mn in a LaMnO3 epitaxial thin film system
Authors:
Wei
Niu
(Nanjing University; Technical University of Denmark)
,
Wenqing
Liu
(Royal Holloway University of London)
,
Min
Gu
(Nanjing University)
,
Yongda
Chen
(Nanjing University)
,
Xiaoqian
Zhang
(Nanjing University)
,
Minhao
Zhang
(Nanjing University)
,
Yequan
Chen
(Nanjing University)
,
Ji
Wang
(Nanjing University)
,
Jun
Du
(Nanjing University)
,
Fengqi
Song
(Nanjing University)
,
Xiaoqing
Pan
(Nanjing University; University of California Irvine)
,
Nini
Pryds
(Technical University of Denmark)
,
Xuefeng
Wang
(Nanjing University)
,
Peng
Wang
(Nanjing University)
,
Yongbing
Xu
(Nanjing University)
,
Yunzhong
Chen
(Technical University of Denmark)
,
Rong
Zhang
(Nanjing University)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Advanced Electronic Materials
, VOL 11
State:
Published (Approved)
Published:
April 2018
Diamond Proposal Number(s):
15239
Abstract: Atomically engineered oxide heterostructures provide a fertile ground for creating novel states, for example, a 2D electron gas at the interface between two oxide insulators, giant thermoelectric Seebeck coefficient, emergent ferromagnetism from otherwise nonmagnetic components, and colossal ionic conductivity. Extensive research efforts reveal that oxygen deficiency or lattice strain play an important role in determining these unexpected properties. Herein, by studying the abrupt presence of robust ferromagnetism (up to 1.5 µB/Mn) in LaMnO3‐based heterostructures, the multivalence states of Mn that play a decisive role in the emergence of ferromagnetism in the otherwise antiferromagnetic LaMnO3 thin films are found. Combining spatially resolved electron energy‐loss spectroscopy, X‐ray absorption spectroscopy, and X‐ray magnetic circular dichroism techniques, it is determined unambiguously that the ferromagnetism results from a conventional Mn3+‐O‐Mn4+ double‐exchange mechanism rather than an interfacial effect. In contrast, the magnetic dead layer of 5 unit cell in proximity to the interface is found to be accompanied with the accumulation of Mn2+ induced by electronic reconstruction. These findings provide a hitherto‐unexplored multivalence state of Mn on the emergent magnetism in undoped manganite epitaxial thin films, such as LaMnO3 and BiMnO3, and shed new light on all‐oxide spintronic devices.
Journal Keywords: dead layers; electronic reconstruction; ferromagnetism; LaMnO3; multivalence states
Diamond Keywords: Ferromagnetism; Spintronics
Subject Areas:
Materials,
Physics
Instruments:
I06-Nanoscience (XPEEM)
Added On:
01/05/2018 09:41
Discipline Tags:
Surfaces
Quantum Materials
Hard condensed matter - electronic properties
Physics
Electronics
Magnetism
Materials Science
interfaces and thin films
Technical Tags:
Spectroscopy
Circular Dichroism (CD)
X-ray Absorption Spectroscopy (XAS)
X-ray Magnetic Circular Dichroism (XMCD)