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Interconversion of intrinsic defects in SrTi O 3 ( 001 )

DOI: 10.1103/PhysRevB.97.245204 DOI Help

Authors: S. A. Chambers (Pacific Northwest National Laboratory) , Y. Du (Pacific Northwest National Laboratory) , Z. Zhu (Pacific Northwest National Laboratory) , J. Wang (Pacific Northwest National Laboratory) , M. J. Wahila (Binghamton University) , L. F. J. Piper (Binghamton University) , A. Prakash (University of Minnesota) , J. Yue (University of Minnesota) , B. Jalan (University of Minnesota) , S. R. Spurgeon (Pacific Northwest National Laboratory) , D. M. Kepaptsoglou (SuperSTEM; University of York) , Q. M. Ramasse (SuperSTEM; University of Leeds) , P. V. Sushko (Pacific Northwest National Laboratory)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 97

State: Published (Approved)
Published: June 2018
Diamond Proposal Number(s): 16630

Abstract: Photoemission features associated with states deep in the band gap of n−SrTiO3(001) are found to be ubiquitous in bulk crystals and epitaxial films. These features are present even when there is little signal near the Fermi level. Analysis reveals that these states are deep-level traps associated with defects. The commonly investigated defects—O vacancies, Sr vacancies, and aliovalent impurity cations on the Ti sites—cannot account for these features. Rather, ab initio modeling points to these states resulting from interstitial oxygen and its interaction with donor electrons.

Journal Keywords: Composition; Defects; Electronic structure; Growth; Photoemission spectroscopy

Subject Areas: Materials, Physics


Instruments: I09-Surface and Interface Structural Analysis