Secondary magnetic phases in (Ga,Mn)As determined by x-ray magnetic circular dichroism.

DOI: 10.1063/1.2756046

Authors: K. W. Edmonds (University of Nottingham) , A. A. Freeman (Diamond Light Source) , N. R. S. Farley (University of Nottingham) , K. Y. Wang (University Of Nottingham) , R. P. Campion (University of Nottingham) , B. L. Gallagher (University of Nottingham) , C. T. Foxon (University of Nottingham) , G. Van Der Laan (Diamond Light Source) , E. Arenholz (Lawrence Berkeley National Laboratory)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Applied Physics , VOL 102

State: Published (Approved)
Published: July 2007

Abstract: We have studied the magnetic and electronic properties of (Ga,Mn)As ferromagnetic semiconductor layers containing low concentrations of room temperature magnetic MnAs precipitates, using x-ray magnetic circular dichroism in x-ray absorption spectroscopy. Measurements below and above the Curie temperature of the (Ga,Mn)As show localized multiplet structures and broad metallic-like line shapes, respectively. By applying magnetic fields below the coercivity of the (Ga,Mn)As layer, the magnetization reversal behavior of the ferromagnetic semiconductor and the MnAs precipitates can be resolved and are found to be independent of each other.

Journal Keywords: Magnetic films; Coercive force; Thin films; Magnetic fields; Magnetic moments

Subject Areas: Physics

Facility: ALS

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