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Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

DOI: 10.1038/s41467-018-05823-z DOI Help

Authors: Slavomir Nemsak (University of California; Lawrence Berkeley National Laboratory; Peter-Grünberg-Institut PGI-6, Forschungszentrum Jülich) , Mathias Gehlmann (University of California; Lawrence Berkeley National Laboratory; Peter-Grünberg-Institut PGI-6, Forschungszentrum Jülich) , Cheng-Tai Kuo (University of California; Lawrence Berkeley National Laboratory) , Shih-Chieh Lin (University of California; Lawrence Berkeley National Laboratory) , Christoph Schlueter (Diamond Light Source) , Ewa Mlynczak (Peter-Grünberg-Institut PGI-6, Forschungszentrum Jülich) , Tien-Lin Lee (Diamond Light Source) , Lukasz Plucinski (Peter-Grünberg-Institut PGI-6, Forschungszentrum Jülich) , Hubert Ebert (Ludwig Maximillian University) , Igor Di Marco (Uppsala University; Asia Pacific Center for Theoretical Physics) , Ján Minár (University of West Bohemia) , Claus M. Schneider (University of California; Peter-Grünberg-Institut PGI-6, Forschungszentrum Jülich) , Charles S. Fadley (University of California; Lawrence Berkeley National Laboratory)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature Communications , VOL 9

State: Published (Approved)
Published: August 2018
Diamond Proposal Number(s): 11516 , 12032

Open Access Open Access

Abstract: The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Journal Keywords: Characterization and analytical techniques; Electronic properties and materials

Diamond Keywords: Semiconductors; Spintronics

Subject Areas: Materials, Physics


Instruments: I09-Surface and Interface Structural Analysis

Added On: 20/08/2018 11:00

Documents:
s41467-018-05823-z.pdf

Discipline Tags:

Materials Science Physics Electronics Hard condensed matter - structures Magnetism Surfaces

Technical Tags:

Spectroscopy X-ray Photoelectron Spectroscopy (XPS) Hard X-ray Photoelectron Spectroscopy (HAXPES)