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Scalable memdiodes exhibiting rectification and hysteresis for neuromorphic computing

DOI: 10.1038/s41598-018-30727-9 DOI Help

Authors: Joshua C. Shank (Georgia Institute of Technology) , M. Brooks Tellekamp (Georgia Institute of Technology) , Matthew J. Wahila (Binghamton University) , Sebastian Howard (Binghamton University) , Alex S. Weidenbach (Georgia Institute of Technology) , Bill Zivasatienraj (Georgia Institute of Technology) , Louis F. J. Piper (Binghamton University) , W. Alan Doolittle (Georgia Institute of Technology)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Scientific Reports , VOL 8

State: Published (Approved)
Published: August 2018
Diamond Proposal Number(s): 16005

Open Access Open Access

Abstract: Metal-Nb2O5−x-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb2O5−x deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it results from the oxygen deficiencies in the amorphous Nb2O5−x. Rectification occurs due to a transition from thermionic emission to tunneling current and is present even in thick devices (>100 nm) due to charge trapping which controls the tunneling distance. The turn-on voltage is linearly proportional to the Schottky barrier height and, in contrast to traditional metal-insulator-metal diodes, is logarithmically proportional to the device thickness. Hysteresis in the I–V curve occurs due to the current limited filling of traps.

Journal Keywords: Characterization and analytical techniques; Electronic and spintronic devices; Electronic devices

Subject Areas: Physics


Instruments: I09-Surface and Interface Structural Analysis

Documents:
s41598-018-30727-9.pdf