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Hybrid heteroepitaxial growth mode

DOI: 10.1002/pssa.201800600 DOI Help

Authors: Christopher W. Burrows (University of Warwick) , Thomas P. A. Hase (University of Warwick) , Gavin R. Bell (University of Warwick)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physica Status Solidi (a) , VOL 110

State: Published (Approved)
Published: October 2018
Diamond Proposal Number(s): 8877

Abstract: A “hybrid” surface growth mode is studied by in situ scanning tunneling microscopy and ex situ synchrotron X‐ray diffraction. Heteroepitaxial growth of MnSb(0001) on GaAs(111) leads to the direct formation of islands, but the islands themselves grow in a local layer‐by‐layer fashion, having low aspect ratio and flat tops. Strained and relaxed islands co‐exist prior to island coalescence, confirming that dislocation formation occurs locally over a range of average film thicknesses.

Journal Keywords: growth mode; molecular beam epitaxy; surface energy; X‐ray diffraction

Subject Areas: Physics

Instruments: I16-Materials and Magnetism

Added On: 17/10/2018 10:38

Discipline Tags:

Surfaces Physics

Technical Tags: