|
|
Peng
Chen
,
Puyang
Huang
,
Zeyu
Li
,
Jieyi
Liu
,
Qi
Yao
,
Qiang
Sun
,
Ang
Li
,
Xinqi
Liu
,
Yifan
Zhang
,
Xinyu
Cai
,
Jiuming
Liu
,
Liyang
Liao
,
Guanying
Yang
,
Zhongkai
Liu
,
Yumeng
Yang
,
Xiaodong
Han
,
Jin
Zou
,
Thorsten
Hesjedal
,
Zhenhua
Qiao
,
Xufeng
Kou
Open Access
Abstract: Berry curvature and spin texture are representative tuning parameters that govern spin-orbit coupling–related physics and are also the foundation for future device applications. Here, we investigate the impact of the Sb-to-Bi ratio on shaping the electronic band structure and its correlated first- and second-harmonic magneto-transport signals in the intrinsic magnetic topological insulator Mn(Bi1−xSbx)2Te4. First-principles calculations reveal that the introduction of Sb not only triggers a topological phase transition but also changes the integral of the Berry curvature at the shifted Fermi level, which leads to the reversal of the anomalous Hall resistance polarity for Sb fractions x > 0.67. Moreover, it also induces the opposite spin splitting of the valence bands compared to the Sb-free host, and the resulting clockwise/counterclockwise spin chirality gives rise to a tunable unidirectional second-harmonic anomalous Hall response. Our findings pave the way for constructing chiral spin-orbitronic devices through band structure engineering.
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May 2025
|
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I06-Nanoscience (XPEEM)
|
Xinqi
Liu
,
Puyang
Huang
,
Yunyouyou
Xia
,
Lei
Gao
,
Liyang
Liao
,
Baoshan
Cui
,
Dirk
Backes
,
Gerrit
Van Der Laan
,
Thorsten
Hesjedal
,
Yuchen
Ji
,
Peng
Chen
,
Yifan
Zhang
,
Fan
Wu
,
Meixiao
Wang
,
Junwei
Zhang
,
Guoqiang
Yu
,
Cheng
Song
,
Yulin
Chen
,
Zhongkai
Liu
,
Yumeng
Yang
,
Yong
Peng
,
Gang
Li
,
Qi
Yao
,
Xufeng
Kou
Abstract: To harness the intriguing properties of 2D van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, the epitaxial growth of single-crystalline 1T-CrTe2 thin films on 2-inch sapphire substrates are demonstrated. Benefiting from the uniform surface energy of the dangling bond-free Al2O3(0001) surface, the layer-by-layer vdW growth mode is observed right from the initial growth stage, which warrants precise control of the sample thickness beyond three monolayer and homogeneous surface morphology across the entire wafer. Moreover, the presence of the Coulomb interaction at the CrTe2/Al2O3 interface plays an important role in tailoring the anomalous Hall response, and the structural optimization of the CrTe2-based spin-orbit torque device leads to a substantial switching power reduction by 54%. The results may lay out a general framework for the design of energy-efficient spintronics based on configurable vdW FMs.
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Sep 2023
|
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I05-ARPES
|
R. Z.
Xu
,
Xian
Du
,
J. S.
Zhou
,
X.
Gu
,
Q. Q.
Zhang
,
Y. D.
Li
,
W. X.
Zhao
,
F. W.
Zheng
,
M.
Arita
,
K.
Shimada
,
T. K.
Kim
,
C.
Cacho
,
Y. F.
Guo
,
Zhongkai
Liu
,
Y. L.
Chen
,
L. X.
Yang
Diamond Proposal Number(s):
[20683]
Open Access
Abstract: TaTe4, a metallic charge-density wave (CDW) material discovered decades ago, has attracted renewed attention due to its rich interesting properties, such as pressure-induced superconductivity and candidate nontrivial topological phase. Here, using high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structure of TaTe4. At 26 K, we observe a CDW gap as large as 290 meV, which persists up to 500 K. The CDW-modulated band structure shows a complex reconstruction that closely correlates with the lattice distortion. Inside the CDW gap, there exist highly dispersive energy bands contributing to the remnant Fermi surface and metallic behavior in the CDW state. Interestingly, our ab initio calculation reveals that the large CDW gap mainly opens in the electronic states with out-of-plane orbital components, while the in-gap metallic states originate from in-plane orbitals, suggesting an orbital texture that couples with the CDW order. Our results shed light on the interplay between electron, lattice, and orbital in quasi-one-dimensional CDW materials.
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Aug 2023
|
|
I05-ARPES
|
Haifeng
Yang
,
Jingjing
Gao
,
Yingying
Cao
,
Yuanji
Xu
,
Aiji
Liang
,
Xiang
Xu
,
Yujie
Chen
,
Shuai
Liu
,
Kui
Huang
,
Lixuan
Xu
,
Chengwei
Wang
,
Shengtao
Cui
,
Meixiao
Wang
,
Lexian
Yang
,
Xuan
Luo
,
Yuping
Sun
,
Yi-Feng
Yang
,
Zhongkai
Liu
,
Yulin
Chen
Open Access
Abstract: Mott physics plays a critical role in materials with strong electronic correlations. Mott insulator-to-metal transition can be driven by chemical doping, external pressure, temperature and gate voltage, which is often seen in transition metal oxides with 3d electrons near the Fermi energy (e.g. cuprate superconductor). In 4f-electron system, however, the insulator-to-metal transition is mostly driven by Kondo hybridization and the Mott physics has rarely been explored in experiments. Here, by combining the angle-resolved photoemission spectroscopy and strongly correlated band structure calculations, we show that an unusual Mott instability exists in YbInCu4 accompanying its mysterious first-order valence transition. This contrasts with the prevalent Kondo picture and demonstrates that YbInCu4 is a unique platform to explore the Mott physics in Kondo lattice systems. Our work provides important insight for the understanding and manipulation of correlated quantum phenomena in the f-electron system.
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Feb 2023
|
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I05-ARPES
|
Hongwei
Fang
,
Meng
Lyu
,
Hao
Su
,
Jian
Yuan
,
Yiwei
Li
,
Lixuan
Xu
,
Shuai
Liu
,
Liyang
Wei
,
Xinqi
Liu
,
Haifeng
Yang
,
Qi
Yao
,
Meixiao
Wang
,
Yanfeng
Guo
,
Wujun
Shi
,
Yulin
Chen
,
Enke
Liu
,
Zhongkai
Liu
Abstract: The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-high carrier mobility (∼8683 and 7356 cm2 V−1 S−1 for holes and electrons) and extreme magnetoresistance (15,518% at 2 K and 13 T) among kagome-lattice materials. These extraordinary properties are well explained by its band structure with indirect gap, small electron/hole pockets and large bandwidth of the 3d electrons of Ni on the kagome lattice. This work demonstrates that the crystal field and doping serve as the key tuning knobs to optimize the transport properties in kagome-lattice crystals. Our work provides material basis and optimization routes for kagome-lattice semimetals towards electronics and spintronics applications.
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Feb 2023
|
|
I10-Beamline for Advanced Dichroism - scattering
|
Peng
Chen
,
Qi
Yao
,
Junqi
Xu
,
Qiang
Sun
,
Alexander J.
Grutter
,
Patrick
Quarterman
,
Purnima P.
Balakrishnan
,
Christy J.
Kinane
,
Andrew J.
Caruana
,
Sean
Langridge
,
Ang
Li
,
Barat
Achinuq
,
Emily
Heppell
,
Yuchen
Ji
,
Shanshan
Liu
,
Baoshan
Cui
,
Jiuming
Liu
,
Puyang
Huang
,
Zhongkai
Liu
,
Guoqiang
Yu
,
Faxian
Xiu
,
Thorsten
Hesjedal
,
Jin
Zou
,
Xiaodong
Han
,
Haijun
Zhang
,
Yumeng
Yang
,
Xufeng
Kou
Diamond Proposal Number(s):
[30262]
Abstract: The intrinsic magnetic topological insulator MnBi2Te4 (MBT) provides a platform for the creation of exotic quantum phenomena. Novel properties can be created by modification of the MnBi2Te4 framework, but the design of stable magnetic structures remains challenging. Here we report ferromagnet-intercalated MnBi2Te4 superlattices with tunable magnetic exchange interactions. Using molecular beam epitaxy, we intercalate ferromagnetic MnTe layers into MnBi2Te4 to create [(MBT)(MnTe)m]N superlattices and examine their magnetic interaction properties using polarized neutron reflectometry and magnetoresistance measurements. Incorporation of the ferromagnetic spacer tunes the antiferromagnetic interlayer coupling of the MnBi2Te4 layers through the exchange-spring effect at MnBi2Te4/MnTe hetero-interfaces. The MnTe thickness can be used to modulate the relative strengths of the ferromagnetic and antiferromagnetic order, and the superlattice periodicity can tailor the spin configurations of the synthesized multilayers.
|
Dec 2022
|
|
I05-ARPES
|
Diamond Proposal Number(s):
[22375]
Abstract: Type-II topological Dirac semimetals are topological quantum materials hosting Lorentz-symmetry breaking type-II Dirac fermions, which are tilted Dirac cones with various exotic physical properties, such as anisotropic chiral anomalies and novel quantum oscillations. Until now, only limited material systems have been confirmed by theory and experiments with the type-II Dirac fermions. Here, we investigated the electronic structure of a new type-II Dirac semimetal VAl3 with angle-resolved photoelectron spectroscopy. The measured band dispersions are consistent with the theoretical prediction, which suggests the Dirac points are located close to (at about 100 meV above) the Fermi level. Our work demonstrates a new type-II Dirac semimetal candidate system with different Dirac node configurations and application potentials.
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Mar 2022
|
|
I05-ARPES
|
Na
Qin
,
Xian
Du
,
Yangyang
Lv
,
Lu
Kang
,
Zhongxu
Yin
,
Jingsong
Zhou
,
Xu
Gu
,
Qinqin
Zhang
,
Runzhe
Xu
,
Wenxuan
Zhao
,
Yidian
Li
,
Shuhua
Yao
,
Yanfeng
Chen
,
Zhongkai
Liu
,
Lexian
Yang
,
Yulin
Chen
Diamond Proposal Number(s):
[20683]
Abstract: Ternary transition metal chalcogenides provide a rich platform to search and study intriguing electronic properties. Using Angle-Resolved Photoemission Spectroscopy and ab initio calculation, we investigate the electronic structure of Cu2TlX2 (X = Se, Te), ternary transition metal chalcogenides with quasi-two-dimensional crystal structure. The band dispersions near the Fermi level are mainly contributed by the Te/Se p orbitals. According to our ab-initio calculation, the electronic structure changes from a semiconductor with indirect band gap in Cu2TlSe2 to a semimetal in Cu2TlTe2, suggesting a band-gap tunability with the composition of Se and Te. By comparing ARPES experimental data with the calculated results, we identify strong modulation of the band structure by spin-orbit coupling in the compounds. Our results provide a ternary platform to study and engineer the electronic properties of transition metal chalcogenides related to large spin-orbit coupling.
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Dec 2021
|
|
I05-ARPES
|
Lixuan
Xu
,
Yuanhao
Mao
,
Hongyuan
Wang
,
Jiaheng
Li
,
Yujie
Chen
,
Yunyouyou
Xia
,
Yiwei
Li
,
Ding
Pei
,
Jing
Zhang
,
Huijun
Zheng
,
Kui
Huang
,
Chaofan
Zhang
,
Shengtao
Cui
,
Aiji
Liang
,
Wei
Xia
,
Hao
Su
,
Sungwon
Jung
,
Cephise
Cacho
,
Meixiao
Wang
,
Gang
Li
,
Yong
Xu
,
Yanfeng
Guo
,
Lexian
Yang
,
Zhongkai
Liu
,
Yulin
Chen
,
Mianheng
Jiang
Diamond Proposal Number(s):
[23648, 24827]
Abstract: Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition. Together with the results of its sister compound MnBi2Te4, we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.
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Jul 2020
|
|
I05-ARPES
|
Cheng
Chen
,
Meixiao
Wang
,
Jinxiong
Wu
,
Huixia
Fu
,
Haifeng
Yang
,
Zhen
Tian
,
Teng
Tu
,
Han
Peng
,
Yan
Sun
,
Xiang
Xu
,
Juan
Jiang
,
Niels B. M.
Schroeter
,
Yiwei
Li
,
Ding
Pei
,
Shuai
Liu
,
Sandy A.
Ekahana
,
Hongtao
Yuan
,
Jiamin
Xue
,
Gang
Li
,
Jinfeng
Jia
,
Zhongkai
Liu
,
Binghai
Yan
,
Hailin
Peng
,
Yulin
Chen
Diamond Proposal Number(s):
[18005]
Open Access
Abstract: Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
|
Sep 2018
|
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