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Instruments / Technical Area	Publication Details	Published	Actions
I09-Surface and Interface Structural Analysis	Insights into post-growth doping and proposals for CdTe:In photovoltaic devices Luke Thomas , Theo D. C. Hobson , Laurie J. Phillips , Kieran J. Cheetham , Neil Tarbuck , Leanne A. H. Jones , Matthew J. Smiles , Chris H. Don , Pardeep K. Thakur , Mark Isaacs , Huw Shiel , Stephen Campbell , Vincent Barrioz , Vin Dhanak , Tim Veal , Jonathan D. Major , Ken Durose Journal Of Physics: Energy DOI: 10.1088/2515-7655/ac7ad5 Diamond Proposal Number(s): [28268] Open Access Show Abstract ▼ Abstract: This paper is motivated by the potential advantages of higher doping and lower contact barriers in CdTe photovoltaic devices that may be realized by using n- type rather than the conventional p-type solar absorber layers. We present post-growth doping trials for indium in thin polycrystalline CdTe films using diffusion of indium metal and with indium chloride. Chemical concentrations of indium up to 1019 cm-3 were achieved and the films were verified as n-type by hard x-ray photoemission. Post growth chlorine treatment (or InCl3) was found to compensate the n-doping. Trial structures comprising CdS/CdTe:In verified that the doped absorber structures performed as expected both before and after chloride treatment, but it is recognized that this is not an optimum combination. Hence in order to identify how the advantages of n-type absorbers might be fully realized in future work, we also report simulations of a range of p-n junction combinations with n-CdTe, a number of which have the potential for high Voc.	Jun 2022

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I09-Surface and Interface Structural Analysis

Insights into post-growth doping and proposals for CdTe:In photovoltaic devices