I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[26188, 33755]
Open Access
Abstract: The intercalation of graphene with suitable atomic species is one of the most frequently applied methods to decouple the graphene layer from the substrate in order to establish the classical electronic properties of graphene. In this context, we studied the bismuth (Bi) intercalation of the (6√3×6√3)R30° reconstructed so-called "zeroth layer graphene'' on SiC(0001).
As reported earlier by Sohn et al. [J. Korean Phys. Soc. 78, 157 (2021)], two phases are formed depending on the amount of intercalated Bi, which in turn is controlled by the annealing temperature: The α phase, showing a 1×1 periodicity with respect to the substrate, and, at higher temperatures, the √3×√3 reconstructed β phase. We characterise both phases and the transformation from the α to the β phase by photoelectron spectroscopy, normal incidence x-ray standing waves, electron diffraction and electron microscopy. We clearly see an almost complete intercalation of the graphene layers in both phases, with strong (covalent) interaction between the topmost Si atoms of the substrate and the Bi intercalant, but only weak (van der Waals) interaction between Bi and the graphene layer. The n-doping of the graphene found for the α phase decreases continuously during the phase transformation, in agreement with a reduced density of the Bi intercalating layer. Missing core level shifts of the surface species as well as the normal incidence x-ray standing waves results indicate that all surface Si atoms remain saturated during the transition and no dangling bonds are formed. Low energy electron microscopy and diffraction reveal the coexistance of both phases after annealing to intermediate temperatures and allow a quantitative analysis of island sizes and numbers.
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Sep 2024
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I09-Surface and Interface Structural Analysis
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Philip
Schädlich
,
Chitran
Ghosal
,
Monja
Stettner
,
Bharti
Matta
,
Susanne
Wolff
,
Franziska
Schölzel
,
Peter
Richter
,
Mark
Hutter
,
Anja
Haags
,
Sabine
Wenzel
,
Zamin
Mamiyev
,
Julian
Koch
,
Serguei
Soubatch
,
Philipp
Rosenzweig
,
Craig
Polley
,
Frank Stefan
Tautz
,
Christian
Kumpf
,
Kathrin
Küster
,
Ulrich
Starke
,
Thomas
Seyller
,
Francois C.
Bocquet
,
Christoph
Tegenkamp
Diamond Proposal Number(s):
[26188, 33755]
Open Access
Abstract: The synthesis of new graphene-based quantum materials by intercalation is an auspicious approach. However, an accompanying proximity coupling depends crucially on the structural details of the new heterostructure. It is studied in detail the Pb monolayer structure after intercalation into the graphene buffer layer on the SiC(0001) interface by means of photoelectron spectroscopy, x-ray standing waves, and scanning tunneling microscopy. A coherent fraction close to unity proves the formation of a flat Pb monolayer on the SiC surface. An interlayer distance of 3.67 Å to the suspended graphene underlines the formation of a truly van der Waals heterostructure. The 2D Pb layer reveals a quasi ten-fold periodicity due to the formation of a grain boundary network, ensuring the saturation of the Si surface bonds. Moreover, the densely-packed Pb layer also efficiently minimizes the doping influence by the SiC substrate, both from the surface dangling bonds and the SiC surface polarization, giving rise to charge-neutral monolayer graphene. The observation of a long-ranged (
) reconstruction on the graphene lattice at tunneling conditions close to Fermi energy is most likely a result of a nesting condition to be perfectly fulfilled.
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Jul 2023
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[18398]
Abstract: Using the normal incidence x-ray standing-wave technique as well as low-energy electron microscopy we have investigated the structure of quasifreestanding monolayer graphene (QFMLG) obtained by intercalation of antimony under the
(
6
√
3
×
6
√
3
)
R
30
∘
reconstructed graphitized
6
H
-SiC(0001) surface, also known as zeroth-layer graphene. We found that Sb intercalation decouples the QFMLG well from the substrate. The distance from the QFMLG to the Sb layer almost equals the expected van der Waals bonding distance of C and Sb. The Sb intercalation layer itself is monoatomic, flat, and located much closer to the substrate, at almost the distance of a covalent Sb-Si bond length. All data is consistent with Sb located on top of the uppermost Si atoms of the SiC bulk.
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Oct 2022
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I09-Surface and Interface Structural Analysis
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You-Ron
Lin
,
Markus
Franke
,
Shayan
Parhizkar
,
Miriam
Raths
,
Victor
Wen-Zhe Yu
,
Tien-Lin
Lee
,
Serguei
Soubatch
,
Volker
Blum
,
F. Stefan
Tautz
,
Christian
Kumpf
,
Francois C.
Bocquet
Diamond Proposal Number(s):
[17737]
Abstract: In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G-
R
0
∘
layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal
B
x
N
y
layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the
0
∘
orientation of the
B
x
N
y
template layer upon annealing.
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Jun 2022
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[23317]
Abstract: The discovery of topological superconductivity in doped
Bi
2
Se
3
made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order to determine the vertical position of the dopants—one of the key parameters for understanding topological superconductivity in this material— for the case of
Sr
x
Bi
2
Se
3
. In particular, we analyze the NIXSW data in consideration of the inelastic mean free path of the photoemitted electrons, which allows us to distinguish between symmetry-equivalent sites. We find that Sr atoms are not situated inside the van der Waals gap between the
Bi
2
Se
3
quintuple layers but rather in the quintuple layer close to the outer Se planes.
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Aug 2021
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[17737, 20810, 20855]
Abstract: We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely
R
0
°
rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a preoriented template to induce the unconventional orientation. Using spot profile analysis low-energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
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Sep 2020
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I09-Surface and Interface Structural Analysis
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Benedikt P.
Klein
,
Juliana M.
Morbec
,
Markus
Franke
,
Katharina K.
Greulich
,
Malte
Sachs
,
Shayan
Parhizkar
,
Francois C.
Bocquet
,
Martin
Schmid
,
Samuel J.
Hall
,
Reinhard J.
Maurer
,
Bernd
Meyer
,
Ralf
Tonner
,
Christian
Kumpf
,
Peter
Kratzer
,
J. Michael
Gottfried
Diamond Proposal Number(s):
[16259]
Abstract: Interfaces between polycyclic π-electron systems and metals play prominent roles in organic or graphene-based (opto)electronic devices, in which performance-related parameters depend critically on the properties of metal/semiconductor contacts. Here, we explore how the topology of the π-electron system influences the bonding and the electronic properties of the interface. We use azulene as a model for nonalternant pentagon-heptagon (5-7) ring pairs and compare it to its isomer naphthalene, which represents the alternant 6-6 ring pair. Their coverage-dependent interaction with Ag(111) and Cu(111) surfaces was studied with the normal-incidence X-ray standing wave (NIXSW) technique, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, UV and X-ray photoelectron spectroscopy (UPS, XPS), and density functional theory (DFT). Coverage-dependent adsorption heights and spectroscopic data reveal that azulene forms shorter interfacial bonds than naphthalene and engages in stronger electronic interactions with both surfaces. These differences are more pronounced on Cu. Increasing coverages lead to larger adsorption heights, indicating bond weakening by intermolecular repulsion. The extensive DFT calculations include dispersive interactions using: (1) the DFT-D3 scheme, (2) the vdWsurf correction based on DFT-TS, (3) a Many-Body Dispersion (MBD) correction scheme, and (4) the D3surf scheme. All methods predict the adsorption heights reasonably well with an average error below 0.1 Å. The stronger bond of azulene is attributed to its nonalternant topology, which results in a reduced HOMO-LUMO gap and brings the LUMO energetically close to the Fermi energy of the metal, causing stronger hybridization with electronic states of the metal surfaces.
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Nov 2019
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I09-Surface and Interface Structural Analysis
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Christine
Bruelke
,
Timo
Heepenstrick
,
Ina
Krieger
,
Beatrice
Wolff
,
Xiaosheng
Yang
,
Ali
Shamsaddinlou
,
Simon
Weiss
,
Francois
Bocquet
,
Stefan
Tautz
,
Serguei
Soubatch
,
Moritz
Sokolowski
Diamond Proposal Number(s):
[14878]
Abstract: The adsorption geometry, the electronic properties, and the adsorption energy of the prototype organic molecule 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) on a monolayer of hexagonal boron nitride (hBN) grown on the Cu(111) surface were determined experimentally. The perylene core is at a large height of 3.37
Å
and only a minute downward displacement of the functional anhydride groups (0.07 Å) occurs, yielding adsorption heights that agree with the sum of the involved van der Waals radii. Thus, already a single hBN layer leads to a decoupled (physisorbed) molecule, contrary to the situation on the bare Cu(111) surface.
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Mar 2019
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I09-Surface and Interface Structural Analysis
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Benedikt P.
Klein
,
Nadine J.
Van Der Heijden
,
Stefan R.
Kachel
,
Markus
Franke
,
Claudio K.
Krug
,
Katharina K.
Greulich
,
Lukas
Ruppenthal
,
Philipp
Müller
,
Phil
Rosenow
,
Shayan
Parhizkar
,
Francois C.
Bocquet
,
Martin
Schmid
,
Wolfgang
Hieringer
,
Reinhard J.
Maurer
,
Ralf
Tonner
,
Christian
Kumpf
,
Ingmar
Swart
,
J. Michael
Gottfried
Diamond Proposal Number(s):
[16259]
Open Access
Abstract: The interaction of carbon-based aromatic molecules and nanostructures with metals can strongly depend on the topology of their π-electron systems. This is shown with a model system using the isomers azulene, which has a nonalternant π system with a 5-7 ring structure, and naphthalene, which has an alternant π system with a 6-6 ring structure. We found that azulene can interact much more strongly with metal surfaces. On copper (111), its zero-coverage desorption energy is 1.86 eV, compared to 1.07 eV for naphthalene. The different bond strengths are reflected in the adsorption heights, which are 2.30 Å for azulene and 3.04 Å for naphthalene, as measured by the normal incidence x-ray standing wave technique. These differences in the surface chemical bond are related to the electronic structure of the molecular π systems. Azulene has a lowlying LUMO that is close to the Fermi energy of Cu and strongly hybridizes with electronic states of the surface, as is shown by photoemission, near-edge x-ray absorption fine-structure, and scanning tunneling microscopy data in combination with theoretical analysis. According to density functional theory calculations, electron donation from the surface into the molecular LUMO leads to negative charging and deformation of the adsorbed azulene. Noncontact atomic force microscopy confirms the deformation, while Kelvin probe force microscopy maps show that adsorbed azulene partially retains its in-plane dipole. In contrast, naphthalene experiences only minor adsorption-induced changes of its electronic and geometric structure. Our results indicate that the electronic properties of metal-organic interfaces, as they occur in organic (opto)electronic devices, can be tuned through modifications of the π topology of the molecular organic semiconductor, especially by introducing 5-7 ring pairs as functional structural elements.
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Feb 2019
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I09-Surface and Interface Structural Analysis
|
Open Access
Abstract: We introduce a software, Torricelli, for the analysis of normal incidence x-ray standing wave data. In particular, given the experimental x-ray reflectivity and photoelectron yield of a data set (photon energy scan), Torricelli provides the corresponding structural parameters. The algorithm and equations on which Torricelli is based are explained here in detail. In particular, the model of the experimental reflectivity takes into account the theoretical reflectivity of the double crystal monochromator as well as the sample crystal, and a Gaussian broadening to account for mosaicity and photon energy spread. If statistical errors are provided together with the photoelectron yield data, these are propagated to produce the statistical errors of the structural parameters. For a more accurate analysis, angle-dependent correction parameters specific to the photoemission process, also beyond the dipole approximation, can be taken into account, especially in the case of non-perfect normal incidence. The obtained structural parameters can be compared, averaged, and displayed in an Argand diagram, along with statistical error bars.
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Dec 2018
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