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Instruments / Technical Area	Publication Details	Published	Actions
B16-Test Beamline	Characterisation of the high dynamic range Large Pixel Detector (LPD) and its use at X-ray free electron laser sources M. C. Veale , P. Adkin , P. Booker , J. Coughlan , M. J. French , M. Hart , T. Nicholls , A. Schneider , P. Seller , I. Pape , K. Sawhney , G. A. Carini , P. A. Hart Journal Of Instrumentation 12, P12003 - P12003 DOI: 10.1088/1748-0221/12/12/P12003 Diamond Proposal Number(s): [13413] Show Abstract ▼ Abstract: The STFC Rutherford Appleton Laboratory have delivered the Large Pixel Detector (LPD) for MHz frame rate imaging at the European XFEL. The detector system has an active area of 0.5 m × 0.5 m and consists of a million pixels on a 500 μm pitch. Sensors have been produced from 500 μm thick Hammamatsu silicon tiles that have been bump bonded to the readout ASIC using a silver epoxy and gold stud technique. Each pixel of the detector system is capable of measuring 105 12 keV photons per image readout at 4.5 MHz. In this paper results from the testing of these detectors at the Diamond Light Source and the Linac Coherent Light Source (LCLS) are presented. The performance of the detector in terms of linearity, spatial uniformity and the performance of the different ASIC gain stages is characterised.	Dec 2017
B16-Test Beamline	Investigating the suitability of GaAs:Cr material for high flux X-ray imaging Matt Veale , Steven Bell , Diana Duarte , Marcus French , Matthew Hart , Andreas Schneider , Paul Seller , Matthew Wilson , Slava Kachkanov , A D Lozinskaya , V A Novikov , O P Tolbanov , A. Tyazhev , A N Zarubin Journal Of Instrumentation 9, C12047 - C12047 16th International Workshop on Radiation Imaging Detectors DOI: 10.1088/1748-0221/9/12/C12047 Diamond Proposal Number(s): [4984] Open Access Show Abstract ▼ Abstract: Semi-insulating wafers of GaAs material with a thickness of 500 micrometres have been compensated with chromium by Tomsk State University. Initial measurements have shown the material to have high resistivity (3 × 10[9] ohm cm) and tests with pixel detectors on a 250 micrometres pitch produced uniform spectroscopic performance across an 80 × 80 pixel array. At present, there is a lack of detectors that are capable of operating at high X-ray fluxes (> 10^8 photons s-1 mm-2) in the energy range 550 keV. Under these conditions, the poor stopping power of silicon, as well as issues with radiation hardness, severely degrade the performance of traditional detectors. While high-Z materials such as CdTe and CdZnTe may have much greater stopping power, the formation of space charge within these detectors degrades detector performance. Initial measurements made with GaAs:Cr detectors suggest that many of its material properties make it suitable for these challenging conditions. In this paper the radiation hardness of the GaAs:Cr material has been measured on the B16 beam line at the Diamond Light Source synchrotron. Small pixel detectors were bonded to the STFC Hexitec ASIC and were irradiated with 3 × 10^8 photons s-1 mm-2 monochromatic 12 keV X-rays up to a maximum dose of 0.6 MGy. Measurements of the spectroscopic performance before and after irradiation have been used to assess the extent of the radiation damage.	Dec 2014

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