B16-Test Beamline
|
Diamond Proposal Number(s):
[15979]
Abstract: For the Phase-II Upgrade of the ATLAS detector The ATLAS Collaboration (2008) [1], a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of n
+
-p
−
-p
+
silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam (
2×3μm2
) and the short average path length of an electron after interaction with an X-ray photon (
≤2μm
), local signal collection in different sensor areas can be studied with high resolution. This study presents results of high resolution 2D-scans of the punch-through protection region of ATLAS silicon micro-strip sensors, showing how far the strip signal collection area extends toward the bias ring and how the region is affected by radiation damage.
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Jul 2018
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B16-Test Beamline
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H.
Pernegger
,
Richard
Bates
,
Craig
Buttar
,
M.
Dalla
,
J. W. Van
Hoorne
,
T.
Kugathasan
,
D.
Maneuski
,
L.
Musa
,
P.
Riedler
,
C.
Riegel
,
C.
Sbarra
,
D.
Schaefer
,
E. J.
Schioppa
,
W.
Snoeys
Open Access
Abstract: The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].
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Jun 2017
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B16-Test Beamline
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Kestutis
Kanisauskas
,
A.
Affolder
,
K.
Arndt
,
Richard
Bates
,
M.
Benoit
,
F. Di
Bello
,
A.
Blue
,
D.
Bortoletto
,
M.
Buckland
,
Craig
Buttar
,
P.
Caragiulo
,
D.
Das
,
J.
Dopke
,
A.
Dragone
,
F.
Ehrler
,
V.
Fadeyev
,
Z.
Galloway
,
H.
Grabas
,
I. M.
Gregor
,
P.
Grenier
,
A.
Grillo
,
B.
Hiti
,
M.
Hoeferkamp
,
L. B. A.
Hommels
,
B. T.
Huffman
,
J.
John
,
C.
Kenney
,
J.
Kramberger
,
Z.
Liang
,
I.
Mandic
,
Dzmitry
Maneuski
,
F.
Martinez-Mckinney
,
S.
Macmahon
,
L.
Meng
,
M.
Mikuž
,
D.
Muenstermann
,
R.
Nickerson
,
I.
Peric
,
P.
Phillips
,
R.
Plackett
,
F.
Rubbo
,
J.
Segal
,
S.
Seidel
,
A.
Seiden
,
I.
Shipsey
,
W.
Song
,
M.
Staniztki
,
D.
Su
,
C.
Tamma
,
R.
Turchetta
,
L.
Vigani
,
J.
Volk
,
R.
Wang
,
M.
Warren
,
F.
Wilson
,
S.
Worm
,
Qinglei
Xiu
,
J.
Zhang
,
H.
Zhu
Diamond Proposal Number(s):
[10391]
Open Access
Abstract: CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.
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Feb 2017
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B16-Test Beamline
Detectors
|
L.
Poley
,
A.
Blue
,
R.
Bates
,
I.
Bloch
,
S.
Díez
,
J.
Fernandez-Tejero
,
C.
Fleta
,
B.
Gallop
,
A.
Greenall
,
I.-M.
Gregor
,
K.
Hara
,
Y.
Ikegami
,
C.
Lacasta
,
K.
Lohwasser
,
D.
Maneuski
,
S.
Nagorski
,
I.
Pape
,
P. W.
Phillips
,
D.
Sperlich
,
K.
Sawhney
,
U.
Soldevila
,
M.
Ullan
,
Y.
Unno
,
M.
Warren
Diamond Proposal Number(s):
[11639]
Open Access
Abstract: The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6centerdot1034 cm−2s−1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb−1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1centerdot1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
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Jul 2016
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B16-Test Beamline
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Dzmitry
Maneuski
,
Richard
Bates
,
Andrew
Blue
,
C.
Buttar
,
Kate
Doonan
,
Lars
Eklund
,
Eva
Gimenez-Navarro
,
D.
Hynds
,
Slava
Kachkanov
,
J.
Kalliopuska
,
Thomas
Mcmullen
,
V.
O'Shea
,
Nicola
Tartoni
,
Richard
Plackett
,
S.
Vahanen
,
Kennenth
Wraight
Diamond Proposal Number(s):
[9405, 10390]
Open Access
Abstract: Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μm thick sensors, with the last pixel-to-edge distance of either 50 or 100 μm. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μm, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μm) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μm thick n-on-p sensors is affected only for the last two pixels (up to 110 μm) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.
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Mar 2015
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B16-Test Beamline
|
R.
Bates
,
A.
Blue
,
M.
Christophersen
,
L.
Eklund
,
S.
Ely
,
V.
Fadeyev
,
E.
Gimenez
,
V.
Kachkanov
,
J.
Kalliopuska
,
A.
Macchiolo
,
D.
Maneuski
,
B. F.
Phlips
,
H. F.-W.
Sadrozinski
,
G.
Stewart
,
N.
Tartoni
,
R. M.
Zain
Diamond Proposal Number(s):
[5728]
Abstract: Reduced edge or "edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.
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Jan 2013
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I06-Nanoscience
|
Open Access
Abstract: The imaging of soft X-ray images is typically performed with charge coupled devices (CCDs). However, these can have limited readout speed, dynamic range and can also require significant cooling to obtain the required signal to noise ratio. Active pixel sensors (APS) are able to combine faster readout speeds and higher dynamic range with in-pixel intelligence to allow region of interest readout and adaptive gain. To obtain high detection efficiency and 100% pixel fill factor the sensor is back thinned and illuminated from the backside. We report on the characterization of a back-thinned APS (Vanilla); an array of 512 × 512 pixels of size 25 × 25 microns. The sensor has a 12-bit digital output for full frame mode, as well as being able to be readout in a fully programmable Region-Of-Interest (ROI) analogue mode. In full frame, the sensor can operate at a readout rate of more than 100 frames per second.
Characterization of the detector was carried out through the analysis of photon transfer curves to yield measurements of the full well capacity, noise levels, gain constants and device linearity. Spectral response measurements were made to show the improvement in detection efficiency using a backthinned sensor. A typical synchrotron experiment was performed at the Diamond Light Source (DLS) using Soft X-rays ( ~ 700 eV) to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of frame rates, up to 20Hz, and a range of temperatures for both a back-thinned Vanilla and a Princeton PIXIS-XO: 2048B CCD. The results of which are compared. The detection efficiency of the APS is shown to be comparable to the CCD for a given frame rate (0.1Hz), with similar noise levels. We suggest that the back-thinned APS are a viable technology choice for the direct detection of soft X-rays for synchrotron applications.
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Dec 2011
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I06-Nanoscience
|
Abstract: We compare a new CMOS Active Pixel Sensor (APS) to a Princeton Instruments PIXIS-XO: 2048B Charge Coupled Device (CCD) with soft X-rays tested in a synchrotron beam line at the Diamond Light Source (DLS). Despite CCDs being established in the field of scientific imaging, APS are an innovative technology that offers advantages over CCDs. These include faster readout, higher operational temperature, in-pixel electronics for advanced image processing and reduced manufacturing cost.
The APS employed was the Vanilla sensor designed by the MI3 collaboration and funded by an RCUK Basic technology grant. This sensor has 520 x 520 square pixels, of size 25 ?m on each side. The sensor can operate at a full frame readout of up to 20 Hz. The sensor had been back-thinned, to the epitaxial layer. This was the first time that a back-thinned APS had been demonstrated at a beam line at DLS.
In the synchrotron experiment soft X-rays with an energy of approximately 708 eV were used to produce a diffraction pattern from a permalloy sample. The pattern was imaged at a range of integration times with both sensors. The CCD had to be operated at a temperature of -55°C whereas the Vanilla was operated over a temperature range from 20°C to -10°C. We show that the APS detector can operate with frame rates up to two hundred times faster than the CCD, without excessive degradation of image quality. The signal to noise of the APS is shown to be the same as that of the CCD at identical integration times and the response is shown to be linear, with no charge blooming effects.
The experiment has allowed a direct comparison of back thinned APS and CCDs in a real soft x-ray synchrotron experiment.
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Dec 2011
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B16-Test Beamline
Optics
|
E. N.
Gimenez-navarro
,
J.
Marchal
,
K. J. S.
Sawhney
,
L.
Alianelli
,
M.
Lozano
,
Giulio
Pellegrini
,
C.
Fleta
,
V.
O'shea
,
R.
Bates
,
C.
Parkes
,
A.
Mac Raighne
,
D.
Maneuski
,
N.
Tartoni
Diamond Proposal Number(s):
[520]
Abstract: Three-dimensional (3D) photodiode detectors offer advantages over standard planar photodiodes in a wide range of applications. The main advantage of these sensors for X-ray imaging is their reduced charge sharing between adjacent pixels, which could improve spatial and spectral resolution. However, a drawback of 3D sensors structures is the loss of detection efficiency due to the presence in the pixel structure of heavily doped electrode columns which are insensitive to X-ray. In this work two types of 3D silicon detectors: n-type wafer with hole collecting readout-columns (n-type) and p-type wafer with electron collecting readout-columns (p-type), bump-bounded to a Medipix2 read-out chip were characterized with a 14.5 keV micro-focused X-ray beam from a synchrotron. Measurements of the detection efficiency and the charge sharing were performed at different bias voltages and Medipix2 energy thresholds and compared with those of a standard planar silicon sensor.
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Jul 2010
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B16-Test Beamline
|
David
Pennicard
,
Julien
Marchal
,
Celeste
Fleta
,
Giulio
Pellegrini
,
Manuel
Lozano
,
Christopher
Parkes
,
Damien
Barnett
,
Nicola
Tartoni
,
Igor
Dolbnya
,
Kawal
Sawhney
,
Richard
Bates
,
Val
O'Shea
,
Victoria
Wright
Abstract: Three-dimensional (3D) photodiode detectors offer advantages over standard planar photodiodes in a range of applications, including X-ray detection for synchrotrons and medical imaging. The principal advantage of these sensors for X-ray imaging is their low charge sharing between adjacent pixels, which could improve spatial and spectral resolution. A 'double-sided' 3D detector has been bonded to a Medipix2 single-photon-counting readout chip, and tested in a monochromatic X-ray beam at the Diamond synchrotron. Tests of the 3D detector's response spectrum and its Line Spread Function have shown that it has substantially lower charge sharing than a standard planar Medipix2 sensor. Additionally, the 3D detector was used to image diffraction rings produced by a powdered silicon sample, demonstrating the detector's use in a standard synchrotron experiment.
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Feb 2010
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