B16-Test Beamline
|
Open Access
Abstract: In the last few years, Low Gain Avalanche Detectors (LGAD) have demonstrated their outstanding performance when detecting high-energy charged particles. However, due to the difference in the multiplication mechanism for holes and electrons, the detection performance for low penetrating particles (e.g low-energy protons or soft x-rays) is significantly reduced. A novel design of an LGAD detector, the NLGAD, was designed and fabricated at CNM to overcome this drawback. A qualitative description of the NLGAD concept is presented in this work, along with gain response measurements of the first prototypes under visible light of 660 nm and 15 keV x-rays. Additionally, a review of the gain response under visible light of 404 nm and IR light of 1064 nm, previously studied, is also evaluated in this work. The results demonstrate that the NLGAD concept has the potential to detect low penetrating particles.
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Jun 2023
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B16-Test Beamline
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L.
Poley
,
K.
Lohwasser
,
A.
Blue
,
M.
Benoit
,
I.
Bloch
,
S.
Díez
,
V.
Fadeyev
,
B.
Gallop
,
A.
Greenall
,
I.-M.
Gregor
,
J.
Keller
,
C.
Lacasta
,
D.
Maneuski
,
L.
Meng
,
M.
Milovanovic
,
I.
Pape
,
P. W.
Phillips
,
L.
Rehnisch
,
K.
Sawhney
,
C.
Sawyer
,
D.
Sperlich
,
M.
Stegler
,
Y.
Unno
,
M.
Warren
,
E.
Yildirim
Diamond Proposal Number(s):
[13500]
Open Access
Abstract: The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam measurements of prototype modules, the response of silicon sensors has been studied in detailed scans across individual sensor strips. These scans found instances of sensor strips collecting charge across areas on the sensor deviating from the geometrical width of a sensor strip. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the sensor strip response.
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Jul 2017
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Detectors
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J. A.
Mir
,
R.
Clough
,
R.
Macinnes
,
C.
Gough
,
R.
Plackett
,
I.
Shipsey
,
H.
Sawada
,
I.
Maclaren
,
R.
Ballabriga
,
D.
Maneuski
,
V.
O'Shea
,
D.
Mcgrouther
,
A. I.
Kirkland
Open Access
Abstract: In this paper we report quantitative measurements of the imaging performance for the current generation of hybrid pixel detector, Medipix3, used as a direct electron detector. We have measured the modulation transfer function and detective quantum efficiency at beam energies of 60 & 80 keV. In single pixel mode, energy threshold values can be chosen to maximize either the modulation transfer function or the detective quantum efficiency, obtaining values near to, or exceeding those for a theoretical detector with square pixels. The Medipix3 charge summing mode delivers simultaneous, high values of both modulation transfer function and detective quantum efficiency. We have also characterized the detector response to single electron events and describe an empirical model that predicts the detector modulation transfer function and detective quantum efficiency based on energy threshold. Exemplifying our findings we demonstrate the Medipix3 imaging performance recording a fully exposed electron diffraction pattern at 24-bit depth together with images in single pixel and charge summing modes. Our findings highlight that for transmission electron microscopy performed at low energies (energies <100 keV) thick hybrid pixel detectors provide an advantageous architecture for direct electron imaging.
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Jun 2017
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B16-Test Beamline
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H.
Pernegger
,
Richard
Bates
,
Craig
Buttar
,
M.
Dalla
,
J. W. Van
Hoorne
,
T.
Kugathasan
,
D.
Maneuski
,
L.
Musa
,
P.
Riedler
,
C.
Riegel
,
C.
Sbarra
,
D.
Schaefer
,
E. J.
Schioppa
,
W.
Snoeys
Open Access
Abstract: The upgrade of the ATLAS [1] tracking detector for the High-Luminosity Large Hadron Collider (LHC) at CERN requires novel radiation hard silicon sensor technologies. Significant effort has been put into the development of monolithic CMOS sensors but it has been a challenge to combine a low capacitance of the sensing node with full depletion of the sensitive layer. Low capacitance brings low analog power. Depletion of the sensitive layer causes the signal charge to be collected by drift sufficiently fast to separate hits from consecutive bunch crossings (25 ns at the LHC) and to avoid losing the charge by trapping. This paper focuses on the characterization of charge collection properties and detection efficiency of prototype sensors originally designed in the framework of the ALICE Inner Tracking System (ITS) upgrade [2]. The prototypes are fabricated both in the standard TowerJazz 180nm CMOS imager process [3] and in an innovative modification of this process developed in collaboration with the foundry, aimed to fully deplete the sensitive epitaxial layer and enhance the tolerance to non-ionizing energy loss. Sensors fabricated in standard and modified process variants were characterized using radioactive sources, focused X-ray beam and test beams before and after irradiation. Contrary to sensors manufactured in the standard process, sensors from the modified process remain fully functional even after a dose of 1015neq/cm2, which is the the expected NIEL radiation fluence for the outer pixel layers in the future ATLAS Inner Tracker (ITk) [4].
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Jun 2017
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B16-Test Beamline
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Kestutis
Kanisauskas
,
A.
Affolder
,
K.
Arndt
,
Richard
Bates
,
M.
Benoit
,
F. Di
Bello
,
A.
Blue
,
D.
Bortoletto
,
M.
Buckland
,
Craig
Buttar
,
P.
Caragiulo
,
D.
Das
,
J.
Dopke
,
A.
Dragone
,
F.
Ehrler
,
V.
Fadeyev
,
Z.
Galloway
,
H.
Grabas
,
I. M.
Gregor
,
P.
Grenier
,
A.
Grillo
,
B.
Hiti
,
M.
Hoeferkamp
,
L. B. A.
Hommels
,
B. T.
Huffman
,
J.
John
,
C.
Kenney
,
J.
Kramberger
,
Z.
Liang
,
I.
Mandic
,
Dzmitry
Maneuski
,
F.
Martinez-Mckinney
,
S.
Macmahon
,
L.
Meng
,
M.
Mikuž
,
D.
Muenstermann
,
R.
Nickerson
,
I.
Peric
,
P.
Phillips
,
R.
Plackett
,
F.
Rubbo
,
J.
Segal
,
S.
Seidel
,
A.
Seiden
,
I.
Shipsey
,
W.
Song
,
M.
Staniztki
,
D.
Su
,
C.
Tamma
,
R.
Turchetta
,
L.
Vigani
,
J.
Volk
,
R.
Wang
,
M.
Warren
,
F.
Wilson
,
S.
Worm
,
Qinglei
Xiu
,
J.
Zhang
,
H.
Zhu
Diamond Proposal Number(s):
[10391]
Open Access
Abstract: CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.
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Feb 2017
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B16-Test Beamline
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Abstract: The onset of twinning from View the MathML source to View the MathML source in large volume Cd1−xZnx Te crystals, grown by vapour transport on View the MathML source, often referred to as (211)B, oriented GaAs seeds, has been investigated using X-ray diffraction imaging (X-ray topography). Twinning is not associated with strains at the GaAs/CdTe interface as the initial growth was always in View the MathML source orientation. Nor is twinning related to lattice strains associated with injection of Zn subsequent to initial nucleation and growth of pure CdTe as in both cases twinning occurred after growth of several mm length of Cd1−xZnxTe. While in both cases examined, there was a region of disturbed growth prior to the twinning transition, in neither crystal does this strain appear to have nucleated the twinning process. In both cases, un-twinned material remained after twinning was observed, the scale of the resulting twin boundaries being sub-micron. Simultaneous twinning across the whole sample surface was observed in one sample, whereas in the other, twinning was nucleated at different points and times in the growth.
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Aug 2016
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B16-Test Beamline
Detectors
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L.
Poley
,
A.
Blue
,
R.
Bates
,
I.
Bloch
,
S.
Díez
,
J.
Fernandez-Tejero
,
C.
Fleta
,
B.
Gallop
,
A.
Greenall
,
I.-M.
Gregor
,
K.
Hara
,
Y.
Ikegami
,
C.
Lacasta
,
K.
Lohwasser
,
D.
Maneuski
,
S.
Nagorski
,
I.
Pape
,
P. W.
Phillips
,
D.
Sperlich
,
K.
Sawhney
,
U.
Soldevila
,
M.
Ullan
,
Y.
Unno
,
M.
Warren
Diamond Proposal Number(s):
[11639]
Open Access
Abstract: The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6centerdot1034 cm−2s−1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb−1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1centerdot1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.
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Jul 2016
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|
B16-Test Beamline
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Dzmitry
Maneuski
,
Richard
Bates
,
Andrew
Blue
,
C.
Buttar
,
Kate
Doonan
,
Lars
Eklund
,
Eva
Gimenez-Navarro
,
D.
Hynds
,
Slava
Kachkanov
,
J.
Kalliopuska
,
Thomas
Mcmullen
,
V.
O'Shea
,
Nicola
Tartoni
,
Richard
Plackett
,
S.
Vahanen
,
Kennenth
Wraight
Diamond Proposal Number(s):
[9405, 10390]
Open Access
Abstract: Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μm thick sensors, with the last pixel-to-edge distance of either 50 or 100 μm. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μm, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μm) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μm thick n-on-p sensors is affected only for the last two pixels (up to 110 μm) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.
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Mar 2015
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I15-Extreme Conditions
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Abstract: Hybrid pixel detectors like the Medipix and
TIMEPIX developed by the Medipix collaboration combined
with high-z materials are of growing interest. In particular the
TIMEPIX detector can be operated in photon counting mode and
time-over-threshold mode (ToT) to obtain spectral information.
Previous studies showed that 110ìm pixel sizes obtain a better
energy resolution than 55ìm pixel sizes. Furthermore, threshold
scans obtained a better spectral resolution than operation in ToT
mode. In this work the influence of noise sources in different
measurement approaches on the spectral response of a TIMEPIX
chip bump-bonded to CdTe sensor are presented. Two 1mm
thick CdTe sensors with pixel sizes of 55ìm and 110 ìm,
bump-bonded to a TIMEPIX readout chip, were evaluated at
the Diamond Light Source synchrotron. A finely collimated,
perpendicular pencil beam with x-ray energies of 25 keV and
79 keV was used to investigate single pixels. A small area of 10x10
pixels was investigated in ToT-mode and compared to a threshold
scan of the same pixels on both detectors. The measurements
are compared to an analytical SPICE/Python simulation
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Nov 2013
|
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B16-Test Beamline
|
R.
Bates
,
A.
Blue
,
M.
Christophersen
,
L.
Eklund
,
S.
Ely
,
V.
Fadeyev
,
E.
Gimenez
,
V.
Kachkanov
,
J.
Kalliopuska
,
A.
Macchiolo
,
D.
Maneuski
,
B. F.
Phlips
,
H. F.-W.
Sadrozinski
,
G.
Stewart
,
N.
Tartoni
,
R. M.
Zain
Diamond Proposal Number(s):
[5728]
Abstract: Reduced edge or "edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.
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Jan 2013
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