I07-Surface & interface diffraction
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Shuai
Yuan
,
Lin-Song
Cui
,
Linjie
Dai
,
Yun
Liu
,
Qing-Weii
Liu
,
Yu-Qi
Sun
,
Florian
Auras
,
Miguel
Anaya
,
Xiaopeng
Zheng
,
Edoardo
Ruggeri
,
You-Jun
Yu
,
Yang-Kun
Qu
,
Mojtaba
Abdi-Jalebi
,
Osman M.
Bakr
,
Zhao-Kui
Wang
,
Samuel D.
Stranks
,
Neil C.
Greenham
,
Liang-Sheng
Liao
,
Richard H.
Friend
Diamond Proposal Number(s):
[17223]
Open Access
Abstract: Metal halide perovskite semiconductors have demonstrated remarkable potentials in solution-processed blue light-emitting diodes (LEDs). However, the unsatisfied efficiency and spectral stability responsible for trap-mediated non-radiative losses and halide phase segregation remain the primary unsolved challenges for blue perovskite LEDs. In this study, it is reported that a fluorene-based π-conjugated cationic polymer can be blended with the perovskite semiconductor to control film formation and optoelectronic properties. As a result, sky-blue and true-blue perovskite LEDs with Commission Internationale de l'Eclairage coordinates of (0.08, 0.22) and (0.12, 0.13) at the record external quantum efficiencies of 11.2% and 8.0% were achieved. In addition, the mixed halide perovskites with the conjugated cationic polymer exhibit excellent spectral stability under external bias. This result illustrates that π-conjugated cationic polymers have a great potential to realize efficient blue mixed-halide perovskite LEDs with stable electroluminescence.
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Sep 2021
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I09-Surface and Interface Structural Analysis
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Zahra
Andaji-Garmaroudi
,
Mojtaba
Abdi-Jalebi
,
Felix U.
Kosasih
,
Tiarnan
Doherty
,
Stuart
Macpherson
,
Alan R.
Bowman
,
Gabriel J.
Man
,
Ute B.
Cappel
,
Hakan
Rensmo
,
Caterina
Ducati
,
Richard H.
Friend
,
Samuel D.
Stranks
Diamond Proposal Number(s):
[22668]
Abstract: Halide perovskites have attracted substantial interest for their potential as disruptive display and lighting technologies. However, perovskite light‐emitting diodes (PeLEDs) are still hindered by poor operational stability. A fundamental understanding of the degradation processes is lacking but will be key to mitigating these pathways. Here, a combination of in operando and ex situ measurements to monitor the performance degradation of (Cs0.06FA0.79MA0.15)Pb(I0.85Br0.15)3 PeLEDs over time is used. Through device, nanoscale cross‐sectional chemical mapping, and optical spectroscopy measurements, it is revealed that the degraded performance arises from an irreversible accumulation of bromide content at one interface, which leads to barriers to injection of charge carriers and thus increased nonradiative recombination. This ionic segregation is impeded by passivating the perovskite films with potassium halides, which immobilizes the excess halide species. The passivated PeLEDs show enhanced external quantum efficiency (EQE) from 0.5% to 4.5% and, importantly, show significantly enhanced stability, with minimal performance roll‐off even at high current densities (>200 mA cm−2). The decay half‐life for the devices under continuous operation at peak EQE increases from <1 to ≈15 h through passivation, and ≈200 h under pulsed operation. The results provide generalized insight into degradation pathways in PeLEDs and highlight routes to overcome these challenges.
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Nov 2020
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Zewei
Li
,
Seán R.
Kavanagh
,
Mari
Napari
,
Robert G.
Palgrave
,
Mojtaba
Abdi-Jalebi
,
Zahra
Andaji-Garmaroudi
,
Daniel W.
Davies
,
Mikko
Laitinen
,
Jaakko
Julin
,
Mark A.
Isaacs
,
Richard H.
Friend
,
David O.
Scanlon
,
Aron
Walsh
,
Robert L. Z.
Hoye
Open Access
Abstract: Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limits photoconversion efficiencies. The bandgap can be reduced through alloying with Sb3+, but Sb-rich alloys are difficult to synthesize due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesize phase-pure Cs2Ag(SbxBi1−x)Br6 thin films, with the mixing parameter x continuously varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) demonstrate smaller bandgaps than the pure Sb- and Bi-based compounds. The reduction in the bandgap of Cs2AgBiBr6 achieved through alloying (170 meV) is larger than if the mixed alloys had obeyed Vegard's law (70 meV). Through in-depth computations, we propose that bandgap lowering arises from the type II band alignment between Cs2AgBiBr6 and Cs2AgSbBr6. The energy mismatch between the Bi and Sb s and p atomic orbitals, coupled with their non-linear mixing, results in the alloys adopting a smaller bandgap than the pure compounds. Our work demonstrates an approach to achieve bandgap reduction and highlights that bandgap bowing may be found in other double perovskite alloys by pairing together materials forming a type II band alignment.
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Oct 2020
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E02-JEM ARM 300CF
I14-Hard X-ray Nanoprobe
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Tiarnan A. S.
Doherty
,
Andrew J.
Winchester
,
Stuart
Macpherson
,
Duncan N.
Johnstone
,
Vivek
Pareek
,
Elizabeth M.
Tennyson
,
Sofiia
Kosar
,
Felix U.
Kosasih
,
Miguel
Anaya
,
Mojtaba
Abdi-Jalebi
,
Zahra
Andaji-Garmaroudi
,
E. Laine
Wong
,
Julien
Madéo
,
Yu-Hsien
Chiang
,
Ji-Sang
Park
,
Young-Kwang
Jung
,
Christopher E.
Petoukhoff
,
Giorgio
Divitini
,
Michael K. l.
Man
,
Caterina
Ducati
,
Aron
Walsh
,
Paul A.
Midgley
,
Keshav M.
Dani
,
Samuel D.
Stranks
Diamond Proposal Number(s):
[19023, 19793]
Abstract: Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices. This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects. Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance, perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance. The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions and with local strain, both of which make devices less stable. Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process, we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices.
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Apr 2020
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I07-Surface & interface diffraction
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Zahra
Andaji-Garmaroudi
,
Mojtaba
Abdi-Jalebi
,
Dengyang
Guo
,
Stuart
Macpherson
,
Aditya
Sadhanala
,
Elizabeth M.
Tennyson
,
Edoardo
Ruggeri
,
Miguel
Anaya
,
Krzysztof
Galkowski
,
Ravichandran
Shivanna
,
Kilian
Lohmann
,
Kyle
Frohna
,
Sebastian
Mackowski
,
Tom J.
Savenije
,
Richard H.
Friend
,
Samuel D.
Stranks
Diamond Proposal Number(s):
[17223]
Open Access
Abstract: Mixed‐halide lead perovskites have attracted significant attention in the field of photovoltaics and other optoelectronic applications due to their promising bandgap tunability and device performance. Here, the changes in photoluminescence and photoconductance of solution‐processed triple‐cation mixed‐halide (Cs0.06MA0.15FA0.79)Pb(Br0.4I0.6)3 perovskite films (MA: methylammonium, FA: formamidinium) are studied under solar‐equivalent illumination. It is found that the illumination leads to localized surface sites of iodide‐rich perovskite intermixed with passivating PbI2 material. Time‐ and spectrally resolved photoluminescence measurements reveal that photoexcited charges efficiently transfer to the passivated iodide‐rich perovskite surface layer, leading to high local carrier densities on these sites. The carriers on this surface layer therefore recombine with a high radiative efficiency, with the photoluminescence quantum efficiency of the film under solar excitation densities increasing from 3% to over 45%. At higher excitation densities, nonradiative Auger recombination starts to dominate due to the extremely high concentration of charges on the surface layer. This work reveals new insight into phase segregation of mixed‐halide mixed‐cation perovskites, as well as routes to highly luminescent films by controlling charge density and transfer in novel device structures.
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Sep 2019
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I09-Surface and Interface Structural Analysis
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Mojtaba
Abdi-Jalebi
,
Zahra
Andaji-Garmaroudi
,
Stefania
Cacovich
,
Camille
Stavrakas
,
Bertrand
Philippe
,
Johannes M.
Richter
,
Mejd
Alsari
,
Edward P.
Booker
,
Eline M.
Hutter
,
Andrew J.
Pearson
,
Samuele
Lilliu
,
Tom J.
Savenije
,
Hakan
Rensmo
,
Giorgio
Divitini
,
Caterina
Ducati
,
Richard H.
Friend
,
Samuel D.
Stranks
Diamond Proposal Number(s):
[15841]
Abstract: Metal halide perovskites are of great interest for various high-performance optoelectronic applications. The ability to tune the perovskite bandgap continuously by modifying the chemical composition opens up applications for perovskites as coloured emitters, in building-integrated photovoltaics, and as components of tandem photovoltaics to increase the power conversion efficiency. Nevertheless, performance is limited by non-radiative losses, with luminescence yields in state-of-the-art perovskite solar cells still far from 100 per cent under standard solar illumination conditions. Furthermore, in mixed halide perovskite systems designed for continuous bandgap tunability (bandgaps of approximately 1.7 to 1.9 electronvolts), photoinduced ion segregation leads to bandgap instabilities. Here we demonstrate substantial mitigation of both non-radiative losses and photoinduced ion migration in perovskite films and interfaces by decorating the surfaces and grain boundaries with passivating potassium halide layers. We demonstrate external photoluminescence quantum yields of 66 per cent, which translate to internal yields that exceed 95 per cent. The high luminescence yields are achieved while maintaining high mobilities of more than 40 square centimetres per volt per second, providing the elusive combination of both high luminescence and excellent charge transport. When interfaced with electrodes in a solar cell device stack, the external luminescence yield—a quantity that must be maximized to obtain high efficiency—remains as high as 15 per cent, indicating very clean interfaces. We also demonstrate the inhibition of transient photoinduced ion-migration processes across a wide range of mixed halide perovskite bandgaps in materials that exhibit bandgap instabilities when unpassivated. We validate these results in fully operating solar cells. Our work represents an important advance in the construction of tunable metal halide perovskite films and interfaces that can approach the efficiency limits in tandem solar cells, coloured-light-emitting diodes and other optoelectronic applications.
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Mar 2018
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I07-Surface & interface diffraction
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Baodan
Zhao
,
Mojtaba
Abdi-Jalebi
,
Maxim
Tabachnyk
,
Hugh
Glass
,
Varun S.
Kamboj
,
Wanyi Andrew
Nie
,
J.
Pearson
,
Yuttapoom
Puttisong
,
Karl C.
Gödel
,
Harvey E.
Beere
,
David A.
Ritchie
,
Aditya D.
Mohite
,
Sian E.
Dutton
,
Richard H.
Friend
,
Aditya
Sadhanala
Diamond Proposal Number(s):
[12436]
Open Access
Abstract: Low-bandgap CH3NH3(Pb x Sn1– x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties have been fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm2 V−1 s−1) intrinsic carrier mobilities.
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Nov 2016
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I07-Surface & interface diffraction
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Open Access
Abstract: Organic photovoltaic (OPV) devices often undergo ‘burn-in’ during the early stages of operation, this period describing the relatively rapid drop in power output before stabilising. For normal and inverted PBDTTT-EFT:PC71BM OPVs prepared according to current protocols, we identify a critical and severe light-induced burn-in phase that reduces power conversion efficiency by at least 60% after 24 hours simulated AM1.5 illumination. Such losses result primarily from a reduction in photocurrent, and for inverted devices we correlate this process in-situ with the simultaneous emergence of space-chare effects on the μs timescale. The effects of burn in are also found to reduce the lifetime of photogenerated charge carriers, as determine by in-situ transient photovoltage measurements. To identify the underlying mechanisms of this instability, a range of techniques are employed ex-situ to separate bulk- and electrode-specific degradation processes. We find that whilst the active layer nanostructure and kinetics of free charge generation remain unchanged, partial photobleaching (6% of film O.D.) of PBDTTT-EFT:PC71BM occurs alongside an increase in the ground state bleach decay time of PBDTTT-EFT. We hypothesise that this latter observation may reflect relaxation from excited states on PBDTTT-EFT that do not undergo dissociation into free charges. Owing to the poor lifetime of the reference PBDTTT-EFT:PC71BM OPVs, the fabrication protocol is modified to identify routes for stability enhancement in this initially promising solar cell blend.
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Mar 2016
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