B07-C-Versatile Soft X-ray beamline: Ambient Pressure XPS and NEXAFS
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Jack E. N.
Swallow
,
Elizabeth S.
Jones
,
Ashley R.
Head
,
Joshua S.
Gibson
,
Roey
Ben David
,
Michael W.
Fraser
,
Matthijs A.
Van Spronsen
,
Shaojun
Xu
,
Georg
Held
,
Baran
Eren
,
Robert S
Weatherup
Diamond Proposal Number(s):
[25834]
Open Access
Abstract: The reactions of H2, CO2, and CO gas mixtures on the surface of Cu at 200 °C, relevant for industrial methanol synthesis, are investigated using a combination of ambient pressure X-ray photoelectron spectroscopy (AP-XPS) and atmospheric-pressure near edge X-ray absorption fine structure (AtmP-NEXAFS) spectroscopy bridging pressures from 0.1 mbar to 1 bar. We find that the order of gas dosing can critically affect the catalyst chemical state, with the Cu catalyst maintained in a metallic state when H2 is introduced prior to the addition of CO2. Only on increasing the CO2 partial pressure is CuO formation observed that coexists with metallic Cu. When only CO2 is present, the surface oxidizes to Cu2O and CuO, and the subsequent addition of H2 partially reduces the surface to Cu2O without recovering metallic Cu, consistent with a high kinetic barrier to H2 dissociation on Cu2O. The addition of CO to the gas mixture is found to play a key role in removing adsorbed oxygen that otherwise passivates the Cu surface, making metallic Cu surface sites available for CO2 activation and subsequent conversion to CH3OH. These findings are corroborated by mass spectrometry measurements, which show increased H2O formation when H2 is dosed before rather than after CO2. The importance of maintaining metallic Cu sites during the methanol synthesis reaction is thereby highlighted, with the inclusion of CO in the gas feed helping to achieve this even in the absence of ZnO as the catalyst support.
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Mar 2023
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B07-B-Versatile Soft X-ray beamline: High Throughput
I10-Beamline for Advanced Dichroism
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Jack E. N.
Swallow
,
Michael W.
Fraser
,
Nis-Julian H.
Kneusels
,
Jodie F.
Charlton
,
Christopher G.
Sole
,
Conor M. E.
Phelan
,
Erik
Bjorklund
,
Peter
Bencok
,
Carlos
Escudero
,
Virginia
Perez-Dieste
,
Clare P.
Grey
,
Rebecca J.
Nicholls
,
Robert S
Weatherup
Diamond Proposal Number(s):
[25647, 29213, 30816]
Open Access
Abstract: The solid electrolyte interphase (SEI) that forms on Li-ion battery anodes is critical to their long-term performance, however observing SEI formation processes at the buried electrode-electrolyte interface is a significant challenge. Here we show that operando soft X-ray absorption spectroscopy in total electron yield mode can resolve the chemical evolution of the SEI during electrochemical formation in a Li-ion cell, with nm-scale interface sensitivity. O, F, and Si K-edge spectra, acquired as a function of potential, reveal when key reactions occur on high-capacity amorphous Si anodes cycled with and without fluoroethylene carbonate (FEC). The sequential formation of inorganic (LiF) and organic (-(C=O)O-) components is thereby revealed, and results in layering of the SEI. The addition of FEC leads to SEI formation at higher potentials which is implicated in the rapid healing of SEI defects and the improved cycling performance observed. Operando TEY-XAS offers new insights into the formation mechanisms of electrode-electrolyte interphases and their stability for a wide variety of electrode materials and electrolyte formulations.
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Oct 2022
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I09-Surface and Interface Structural Analysis
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Theodore D. C.
Hobson
,
Huw
Shiel
,
Christopher N.
Savory
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Bhaskar
Das
,
Chris
Leighton
,
Guillaume
Zoppi
,
Vin R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
,
Ken
Durose
,
Jonathan D.
Major
Diamond Proposal Number(s):
[23160]
Open Access
Abstract: Antimony selenide (Sb2Se3) is a promising absorber material for thin-film
photovoltaics. However, certain areas of fundamental understanding of this material
remain incomplete and this presents a barrier to further efficiency gains. In particular,
recent studies have highlighted the role of majority carrier type and extrinsic doping
in drastically changing the performance of high efficiency devices [1]. Herein, Sndoped
Sb2Se3 bulk crystals are shown to exhibit p-type conductivity using Hall effect
and hot-probe measurements. The measured conductivities are higher than those
achieved through native defects alone, but with a carrier density (up to 7.4 × 1014
cm−3) several orders of magnitude smaller than the quantity of Sn included in the
source material. Additionally, a combination of ultraviolet, X-ray and hard X-ray
photoemission spectroscopies are employed to obtain a non-destructive depth profile of
the valence band maximum, confirming p-type conductivity and indicating a majority
carrier type inversion layer at the surface. Finally, these results are supported by
density functional theory calculations of the defect formation energies in Sn-doped
Sb2Se3, showing a possible limit on the carrier concentration achievable with Sn as
a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in
Sb2Se3 and highlights avenues for further optimisation of doped Sb2Se3 for solar energy
devices.
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Sep 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[25807]
Abstract: The key charge transfer processes in energy storage devices occur at the electrode-electrolyte interface, which is typically buried making it challenging to access the interfacial chemistry. In the case of Li-ion batteries, metallic Li electrodes hold promise for increasing energy and power densities, and when used in conjunction with solid electrolytes adverse safety implications associated with dendrite formation in organic liquid electrolytes can potentially be overcome. To better understand the stability of solid electrolytes when in contact with alkali metals and the reactions that occur, here we consider the deposition of thin (~10 nm) alkali metal films onto solid electrolyte surfaces, that are thin enough that X-ray photoelectron spectroscopy can probe the buried electrode-electrolyte interface. We highlight the importance of in situ alkali metal deposition, by assessing the contaminant species that are present after glovebox handling and the use of ‘inert’ transfer devices. Consequently, we compare and contrast three available methods for in situ alkali-metal deposition; Li sputter deposition, Li evaporation, and Li plating induced by e− flood-gun irradiation. Studies on both a sulphide solid electrolyte (Li6PS5Cl), and a single-layer graphene probe surface reveal that the more energetic Li deposition methods such as sputtering can induce surface damage and interfacial mixing that is not seen with thermal evaporation. This indicates that appropriate selection of the Li deposition method for in situ studies is required to observe representative behaviour, and the results of previous studies involving energetic deposition may warrant further evaluation.
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Jan 2022
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I09-Surface and Interface Structural Analysis
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Matthew J.
Smiles
,
Jonathan M.
Skelton
,
Huw
Shiel
,
Leanne A. H.
Jones
,
Jack E. N.
Swallow
,
Holly J.
Edwards
,
Thomas
Featherstone
,
Philip A. E.
Murgatroyd
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Vinod R.
Dhanak
,
Tim D.
Veal
Diamond Proposal Number(s):
[21431, 23160]
Open Access
Abstract: Germanium sulfide and germanium selenide bulk crystals were prepared using a melt growth technique. X-ray photoemission spectroscopy (XPS) was used to determine ionisation potentials of 5.74 and 5.48 eV for GeS and GeSe respectively. These values were used with the previously-measured band gaps to establish the natural band alignments with potential window layers for solar cells and to identify CdS and TiO2 as sensible choices. The ionisation potential of GeS is found to be smaller than in comparable materials. Using XPS and hard x-ray photoemission (HAXPES) measurements in conjunction with density-functional theory calculations, we demonstrate that stereochemically active Ge 4s lone pairs are present at the valence-band maxima. Our work thus provides direct evidence for active lone pairs in GeS and GeSe, with important implications for the applications of these and related materials, such as Ge-based perovskites.
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Sep 2021
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B07-C-Versatile Soft X-ray beamline: Ambient Pressure XPS and NEXAFS
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Ye
Fan
,
Kenichi
Nakanishi
,
Vlad P.
Veigang-Radulescu
,
Ryo
Mizuta
,
J. Callum
Stewart
,
Jack E. N.
Swallow
,
Alice E.
Dearle
,
Oliver J.
Burton
,
Jack A.
Alexander-Webber
,
Pilar
Ferrer
,
Georg
Held
,
Barry
Brennan
,
Andrew J.
Pollard
,
Robert S
Weatherup
,
Stephan
Hofmann
Diamond Proposal Number(s):
[22123]
Open Access
Abstract: We find that the use of Au substrate allows fast, self-limited WS2 monolayer growth using a simple sequential exposure pattern of low cost, low toxicity precursors, namely tungsten hexacarbonyl and dimethylsulfide (DMS). We use this model reaction system to fingerprint the technologically important metal organic chemical vapour deposition process by operando X-ray photoelectron spectroscopy (XPS) to address the current lack of understanding of the underlying fundamental growth mechanisms for WS2 and related transition metal dichalcogenides. Au effectively promotes the sulfidation of W with simple organosulfides, enabling WS2 growth with low DMS pressure (<1 mbar) and a suppression of carbon contamination of as-grown WS2, which to date has been a major challenge with this precursor chemistry. Full WS2 coverage can be achieved by one exposure cycle of 10 minutes at 700 °C. We discuss our findings in the wider context of previous literature on heterogeneous catalysis, 2D crystal growth, and overlapping process technologies such as atomic layer deposition (ALD) and direct metal conversion, linking to future integrated manufacturing processes for transition metal dichalcogenide layers.
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Oct 2020
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I09-Surface and Interface Structural Analysis
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Abstract: This thesis explores some of the fundamental properties of a rather special class of materials, the transparent conducting oxides. These ‘semiconductors’ combine the usually mutually exclusive properties of optical transparency with high electronic conductivity. Conventionally, TCOs are formed from metal-oxide structures doped with an element from the right hand column in the periodic table of either the anion (e.g. F in SnO2) or cation (Sn in In2O3). However, TCOs that use unconventional dopants (i.e. dopant elements not from the subsequent column in the periodic table) which display much improved optoelectronic properties are quite frequently reported in the literature. Most often, the host materials are doped with transition metal elements which can display unusual electronic configurations and many common oxidation states, making their properties as dopants hard to predict and understand.
In this thesis, the properties of selected TCOs are presented in three case studies.
The first study is on a conventionally doped and commercially available TCO, F:SnO2, in which the limitation of the electronic performance of the material is attributed to extrinsic defects associated with the dopant element. The second is a comparison between an In2O3 system doped with the transition metal Mo, and its conventionally doped and commercially relevant counterpart Sn:In2O3. In this study, the system with the novel dopant (Mo:In2O3) is shown to display much improved properties over the conventionally doped system. This is explained in the context of the band structure modifications due to choice of dopant. Finally, the surface properties of a relatively novel oxide semiconductor system, β-Ga2 O3 , are investigated. β-Ga2 O3 has gained a lot of attention in the literature recently, and is a rare case of a III-VI oxide whose properties are not well established. The natural surface electronic state of this material is determined and the effect that surface H adsorption has on the surface space charge is investigated.
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Jun 2020
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I09-Surface and Interface Structural Analysis
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Jack E. N.
Swallow
,
Benjamin A. D.
Williamson
,
Sanjayan
Sathasivam
,
Max
Birkett
,
Thomas J.
Featherstone
,
Philip A. E.
Murgatroyd
,
Holly J.
Edwards
,
Zachary W.
Lebens-Higgins
,
David A.
Duncan
,
Mark
Farnworth
,
Paul
Warren
,
Nianhua
Peng
,
Tien-Lin
Lee
,
Louis F. J.
Piper
,
Anna
Regoutz
,
Claire J.
Carmalt
,
Ivan P.
Parkin
,
Vin R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
Diamond Proposal Number(s):
[18428]
Open Access
Abstract: Transparent conductors are a vital component of smartphones, touch-enabled displays, low emissivity windows and thin film photovoltaics. Tin-doped In2O3 (ITO) dominates the transparent conductive films market, accounting for the majority of the current multi-billion dollar annual global sales. Due to the high cost of indium, however, alternatives to ITO have been sought but have inferior properties. Here we demonstrate that molybdenum-doped In2O3 (IMO) has higher mobility and therefore higher conductivity than ITO with the same carrier density. This also results in IMO having increased infrared transparency compared to ITO of the same conductivity. These properties enable current performance to be achieved using thinner films, reducing the amount of indium required and raw material costs by half. The enhanced doping behavior arises from Mo 4d donor states being resonant high in the conduction band and negligibly perturbing the host conduction band minimum, in contrast to the adverse perturbation caused by Sn 5s dopant states. This new understanding will enable better and cheaper TCOs based on both In2O3 and other metal oxides.
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Sep 2019
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I09-Surface and Interface Structural Analysis
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Matthew J.
Wahila
,
Galo
Paez
,
Christopher N.
Singh
,
Anna
Regoutz
,
Shawn
Sallis
,
Mateusz J.
Zuba
,
Jatinkumar
Rana
,
M. Brooks
Tellekamp
,
Jos E.
Boschker
,
Toni
Markurt
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Tim D.
Veal
,
Wanli
Yang
,
Tien-Lin
Lee
,
Fanny
Rodolakis
,
Jerzy T.
Sadowski
,
David
Prendergast
,
Wei-Cheng
Lee
,
W. Alan
Doolittle
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Abstract: The metal-insulator transition of
NbO
2
is thought to be important for the functioning of recent niobium oxide-based memristor devices, and is often described as a Mott transition in these contexts. However, the actual transition mechanism remains unclear, as current devices actually employ electroformed
NbO
x
that may be inherently different to crystalline
NbO
2
. We report on our synchrotron x-ray spectroscopy and density-functional-theory study of crystalline, epitaxial
NbO
2
thin films grown by pulsed laser deposition and molecular beam epitaxy across the metal-insulator transition at
∼
810
∘
C
. The observed spectral changes reveal a second-order Peierls transition driven by a weakening of Nb dimerization without significant electron correlations, further supported by our density-functional-theory modeling. Our findings indicate that employing crystalline
NbO
2
as an active layer in memristor devices may facilitate analog control of the resistivity, whereby Joule-heating can modulate Nb-Nb dimer distance and consequently control the opening of a pseudogap.
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Jul 2019
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I09-Surface and Interface Structural Analysis
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Jack E. N.
Swallow
,
Benjamin A. D.
Williamson
,
Max
Birkett
,
Alex
Abbott
,
Mark
Farnworth
,
Thomas J.
Featherstone
,
Nianhua
Peng
,
J.
Kieran Cheetham
,
Paul
Warren
,
Anna
Regoutz
,
David A.
Duncan
,
Tien-Lin
Lee
,
David O.
Scanlon
,
R.
Vin Dhanak
,
Tim D.
Veal
Abstract: Fluorine-doped tin oxide (FTO) is a commercially successful transparent conducting oxide with very good electrical (resistivities < 1 × 10 3 Ω⋅ cm) and optical properties (transmittance >85%). These properties coupled with cheap and large-scale deposition on float-glass lines means FTO has found commercial use in, for example, low emissivity windows and solar cells. However, despite its widespread application, a detailed understanding is lacking of the doping and defects in FTO. Recent work [1] has suggested that the fluorine interstitial plays a major role in limiting the conductivity of FTO. Here we present synchrotron radiation high energy x-ray photoemission spectroscopy (XPS) of the fluorine 1s core level of FTO films without in situ surface preparation. This probes deeper than standard XPS and shows that the fluorine interstitial is present not just at the surface of the films and is not an artefact of argon ion sputtering for surface preparation.
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Nov 2018
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