I09-Surface and Interface Structural Analysis
|
Leanne A. H.
Jones
,
Zongda
Xing
,
Jack E. N.
Swallow
,
Huw
Shiel
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Nicole
Fleck
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Laurence J.
Hardwick
,
David O.
Scanlon
,
Anna
Regoutz
,
Tim D.
Veal
,
Vinod R.
Dhanak
Diamond Proposal Number(s):
[25980]
Open Access
Abstract: A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.
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Dec 2022
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I09-Surface and Interface Structural Analysis
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Adam J.
Jackson
,
Benjamin J.
Parrett
,
Joe
Willis
,
Alex M.
Ganose
,
W. W. Winnie
Leung
,
Yuhan
Liu
,
Benjamin A. D.
Williamson
,
Timur K.
Kim
,
Moritz
Hoesch
,
Larissa S. I.
Veiga
,
Raman
Kalra
,
Jens
Neu
,
Charles A.
Schmuttenmaer
,
Tien-Lin
Lee
,
Anna
Regoutz
,
Tung-Chun
Lee
,
Tim D.
Veal
,
Robert G.
Palgrave
,
Robin
Perry
,
David O.
Scanlon
Diamond Proposal Number(s):
[24449]
Open Access
Abstract: Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is limited to a handful of systems that have been known for the past 40 years. In this work, we use hybrid density functional theory and defect chemistry analysis to demonstrate that tri-rutile zinc antimonate, ZnSb2O6, is an ideal transparent conducting oxide and to identify gallium as the optimal dopant to yield high conductivity and transparency. To validate our computational predictions, we have synthesized both powder samples and single crystals of Ga-doped ZnSb2O6 which conclusively show behavior consistent with a degenerate transparent conducting oxide. This study demonstrates the possibility of a family of Sb(V)-containing oxides for transparent conducting oxide and power electronics applications.
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Oct 2022
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I09-Surface and Interface Structural Analysis
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Theodore D. C.
Hobson
,
Huw
Shiel
,
Christopher N.
Savory
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Bhaskar
Das
,
Chris
Leighton
,
Guillaume
Zoppi
,
Vin R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
,
Ken
Durose
,
Jonathan D.
Major
Diamond Proposal Number(s):
[23160]
Open Access
Abstract: Antimony selenide (Sb2Se3) is a promising absorber material for thin-film
photovoltaics. However, certain areas of fundamental understanding of this material
remain incomplete and this presents a barrier to further efficiency gains. In particular,
recent studies have highlighted the role of majority carrier type and extrinsic doping
in drastically changing the performance of high efficiency devices [1]. Herein, Sndoped
Sb2Se3 bulk crystals are shown to exhibit p-type conductivity using Hall effect
and hot-probe measurements. The measured conductivities are higher than those
achieved through native defects alone, but with a carrier density (up to 7.4 × 1014
cm−3) several orders of magnitude smaller than the quantity of Sn included in the
source material. Additionally, a combination of ultraviolet, X-ray and hard X-ray
photoemission spectroscopies are employed to obtain a non-destructive depth profile of
the valence band maximum, confirming p-type conductivity and indicating a majority
carrier type inversion layer at the surface. Finally, these results are supported by
density functional theory calculations of the defect formation energies in Sn-doped
Sb2Se3, showing a possible limit on the carrier concentration achievable with Sn as
a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in
Sb2Se3 and highlights avenues for further optimisation of doped Sb2Se3 for solar energy
devices.
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Sep 2022
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I09-Surface and Interface Structural Analysis
|
Laura E.
Ratcliff
,
Takayoshi
Oshima
,
Felix
Nippert
,
Benjamin M.
Janzen
,
Elias
Kluth
,
Rüdiger
Goldhahn
,
Martin
Feneberg
,
Piero
Mazzolini
,
Oliver
Bierwagen
,
Charlotte
Wouters
,
Musbah
Nofal
,
Martin
Albrecht
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Curran
Kalha
,
Christoph
Schlueter
,
Tim D.
Veal
,
Joel B.
Varley
,
Markus R.
Wagner
,
Anna
Regoutz
Diamond Proposal Number(s):
[21430, 24670]
Open Access
Abstract: Ga2O3 and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga2O3 offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. γ-Ga2O3 presents a particular challenge across synthesis, characterisation, and theory due to its inherent disorder and resulting complex structure – electronic structure relationship. Here, density functional theory is used in combination with a machine learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the γ-phase. Theoretical results are compared with surface and bulk sensitive soft and hard X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of γ-Ga2O3. The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by PLE spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step towards exploring how their electronic structure can be understood in terms of local coordination and overall structure.
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Jul 2022
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I09-Surface and Interface Structural Analysis
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Luke
Thomas
,
Theo D. C.
Hobson
,
Laurie J.
Phillips
,
Kieran J.
Cheetham
,
Neil
Tarbuck
,
Leanne A. H.
Jones
,
Matthew J.
Smiles
,
Chris H.
Don
,
Pardeep K.
Thakur
,
Mark
Isaacs
,
Huw
Shiel
,
Stephen
Campbell
,
Vincent
Barrioz
,
Vin
Dhanak
,
Tim
Veal
,
Jonathan D.
Major
,
Ken
Durose
Diamond Proposal Number(s):
[28268]
Open Access
Abstract: This paper is motivated by the potential advantages of higher doping and lower contact barriers in CdTe photovoltaic devices that may be realized by using n- type rather than the conventional p-type solar absorber layers. We present post-growth doping trials for indium in thin polycrystalline CdTe films using diffusion of indium metal and with indium chloride. Chemical concentrations of indium up to 1019 cm-3 were achieved and the films were verified as n-type by hard x-ray photoemission. Post growth chlorine treatment (or InCl3) was found to compensate the n-doping. Trial structures comprising CdS/CdTe:In verified that the doped absorber structures performed as expected both before and after chloride treatment, but it is recognized that this is not an optimum combination. Hence in order to identify how the advantages of n-type absorbers might be fully realized in future work, we also report simulations of a range of p-n junction combinations with n-CdTe, a number of which have the potential for high Voc.
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Jun 2022
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I09-Surface and Interface Structural Analysis
|
Matthew J.
Smiles
,
Thomas
Shalvey
,
Luke
Thomas
,
Theodore D. C.
Hobson
,
Leanne A. H.
Jones
,
Laurie
Phillips
,
Christopher
Don
,
Thomas
Beesley
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Ken
Durose
,
Jonathan D.
Major
,
Tim
Veal
Diamond Proposal Number(s):
[31170]
Open Access
Abstract: Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb2Se3 interfacial layer. The Ag-doping of GeSe occurred by a stoichiometric melt growth technique that created Ag-doped GeSe bulk crystals. A combination of capacitance voltage measurements, synchrotron radiation photoemission spectroscopy and surface space-charge calculations indicate Ag-doping increases the hole density from 5.2×1015 cm-3 to 1.9×1016 cm-3. The melt-grown material is used as the source for thermally evaporated GeSe films within solar cells. The cell structure with the highest efficiency of 0.260% is FTO/CdS/Sb2Se3/undoped-GeSe/Au compared with solar cells without the Sb2Se3 interfacial layer or with the Ag-doped GeSe.
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Apr 2022
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I09-Surface and Interface Structural Analysis
|
Matthew J.
Smiles
,
Jonathan M.
Skelton
,
Huw
Shiel
,
Leanne A. H.
Jones
,
Jack E. N.
Swallow
,
Holly J.
Edwards
,
Thomas
Featherstone
,
Philip A. E.
Murgatroyd
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Vinod R.
Dhanak
,
Tim D.
Veal
Diamond Proposal Number(s):
[21431, 23160]
Open Access
Abstract: Germanium sulfide and germanium selenide bulk crystals were prepared using a melt growth technique. X-ray photoemission spectroscopy (XPS) was used to determine ionisation potentials of 5.74 and 5.48 eV for GeS and GeSe respectively. These values were used with the previously-measured band gaps to establish the natural band alignments with potential window layers for solar cells and to identify CdS and TiO2 as sensible choices. The ionisation potential of GeS is found to be smaller than in comparable materials. Using XPS and hard x-ray photoemission (HAXPES) measurements in conjunction with density-functional theory calculations, we demonstrate that stereochemically active Ge 4s lone pairs are present at the valence-band maxima. Our work thus provides direct evidence for active lone pairs in GeS and GeSe, with important implications for the applications of these and related materials, such as Ge-based perovskites.
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Sep 2021
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I09-Surface and Interface Structural Analysis
|
Huw
Shiel
,
Theodore D. C.
Hobson
,
Oliver S.
Hutter
,
Laurie J.
Phillips
,
Matthew J.
Smiles
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Jack E. N.
Swallow
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Jonathan D.
Major
,
Ken
Durose
,
Tim D.
Veal
Diamond Proposal Number(s):
[23160]
Open Access
Abstract: Antimony selenide (Sb2
2
Se3
3
) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb2
2
O3
3
) layer at the surface of Sb2
2
Se3
3
thin films during deposition and exposure to air, which can affect the contact between Sb2
2
Se3
3
and subsequent layers. In this study, photoemission techniques were utilized on both Sb2
2
Se3
3
bulk crystals and thin films to investigate the band alignment between Sb2
2
Se3
3
and the Sb2
2
O3
3
layer. By subtracting the valence band spectrum of an in situ cleaved Sb2
2
Se3
3
bulk crystal from that of the atmospherically contaminated bulk crystal, a valence band offset (VBO) of −1.72
−
1.72
eV is measured between Sb2
2
Se3
3
and Sb2
2
O3
3
. This result is supported by a −1.90
−
1.90
eV VBO measured between Sb2
2
O3
3
and Sb2
2
Se3
3
thin films via the Kraut method. Both results indicate a straddling alignment that would oppose carrier extraction through the back contact of superstrate PV devices. This work yields greater insight into the band alignment of Sb2
2
O3
3
at the surface of Sb2
2
Se3
3
films, which is crucial for improving the performance of these PV devices.
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Jun 2021
|
|
|
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Open Access
Abstract: The expectation to progress towards Terawatts production by solar technologies requires continuous development of new materials to improve efficiency and lower the cost of devices beyond what is currently available at industrial level. At the same time, the turnaround time to make the investment worthwhile is progressively shrinking. Whereas traditional absorbers have developed in a timeframe spanning decades, there is an expectation that emerging materials will be converted into industrially relevant reality in a much shorter timeframe. Thus, it becomes necessary to develop new approaches and techniques that could accelerate decision-making steps on whether further research on a material is worth pursuing or not. In this review, we will provide an overview of the photoemission characterization methods and theoretical approaches that have been developed in the past decades to accelerate the transfer of emerging solar absorbers into efficient devices.
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Mar 2021
|
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I09-Surface and Interface Structural Analysis
|
Huw
Shiel
,
Oliver S.
Hutter
,
Laurie J.
Phillips
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Vinod R.
Dhanak
,
Jonathan D.
Major
,
Tim D.
Veal
Diamond Proposal Number(s):
[23160]
Abstract: Sb2Se3 is a promising material for use in photovoltaics, but the optimum device structure has not yet been identified. This study provides band alignment measurements between Sb2Se3, identical to that used in high-efficiency photovoltaic devices, and its two most commonly used window layers, namely, CdS and TiO2. Band alignments are measured via two different approaches: Anderson’s rule was used to predict an interface band alignment from measured natural band alignments, and the Kraut method was used in conjunction with hard X-ray photoemission spectroscopy to directly measure the band offsets at the interface. This allows examination of the effect of interface formation on the band alignments. The conduction band minimum (CBM) of TiO2 is found by the Kraut method to lie 0.82 eV below that of Sb2Se3, whereas the CdS CBM is only 0.01 eV below that of Sb2Se3. Furthermore, a significant difference is observed between the natural alignment- and Kraut method-determined offsets for TiO2/Sb2Se3, whereas there is little difference for CdS/Sb2Se3. Finally, these results are related to device performance, taking into consideration how these results may guide the future development of Sb2Se3 solar cells and providing a methodology that can be used to assess band alignments in device-relevant systems.
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Dec 2020
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