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Instruments / Technical Area	Publication Details	Published
B16-Test Beamline	Strain mapping of silicon carbon suspended membranes Gerard Colston , Oliver Newell , Stephen D. Rhead , Vishal A. Shah , Maksym Myronov Materials & Design 55 DOI: 10.1016/j.matdes.2021.110135 Diamond Proposal Number(s): [11773, 10303] Open Access Show Abstract ▼ Abstract: The alloy silicon carbon (Si1-yCy) has various strain engineering applications. It is often implemented as a dopant diffusion barrier and has been identified as a potential buffer layer for cubic silicon carbide (3C-SiC) heteroepitaxy. While suspended membranes formed from thin films of semiconductor (Ge and 3C-SiC) and dielectric (Si3N4) materials have been well studied, pseudomorphic, defect-free epilayers under high levels of tensile strain have received little attention. Often, tensile strain is a desired quality of semiconductors and enhancing this property can lead to various benefits of subsequent device applications. The strain state and crystalline tilt of suspended Si1-yCy epilayers have been investigated through micro-X-ray diffraction techniques. The in-plane tensile strain of the alloy was found to increase from 0.67% to 0.82%. This strain increase could reduce the C content required to achieve suitable levels of strain in such alloys and further strain enhancement could be externally induced. The source of this strain increase was found to stem from slight tilts at the edges of the membranes, however, the bulk of the suspended films remained flat. The novel process utilised to fabricate suspended Si1-yCy thin-films is applicable to many other materials that are typically not resistant to anisotropic Si wet etchants.	Sep 2021
B16-Test Beamline	Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction Gerard Colston , Stephen Rhead , Vishal A. Shah , Oliver Newell , Igor Dolbnya , David R. Leadley , Maksym Myronov Materials & Design 103, 244 - 248 DOI: 10.1016/j.matdes.2016.04.078 Diamond Proposal Number(s): [11773, 10303] Show Abstract ▼ Abstract: Micro X-ray diffraction (μ-XRD) has been used to map the strain profile of a suspended crystalline cubic Silicon Carbide (3C-SiC) square membrane. While the presence of crystal defects in the 3C-SiC epilayer induces significant errors on the position of the 3C-SiC Bragg peaks, relaxation from residual tensile strain can be observed and directly quantified from the XRD measurements. The advantage of μ-XRD over other strain mapping techniques is that the tilt of the crystalline layers can be measured simultaneously with the lattice parameters. Significant tilt variations have been observed at the corner of the 3C-SiC membrane, implying that the undercut from chemical etching induces distortions in the crystal structure. These distortions are likely to be the cause of the increase in strain commonly observed at the edges of suspended structures using the micro-Raman shift strain mapping technique.	Aug 2016
B16-Test Beamline	Mapping the strain state of 3C-SiC/Si (001) suspended structures using μ-XRD Gerard Colston , Stephen D. Rhead , Vishal A. Shah , Oliver J. Newell , Igor P. Dolbnya , David R. Leadley , Maksym Myronov Materials Science Forum 858, 274 - 277 DOI: 10.4028/www.scientific.net/MSF.858.274 Diamond Proposal Number(s): [11773] Show Abstract ▼ Abstract: The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps were acquired by calculating the residual strain from the shift in 3C-SiC Raman peaks. Comparable trends in strain relaxation are observed by both methods, although the sensitivity of μ-XRD is higher using our measurement conditions. While Raman shift provides a fast and convenient method for mapping strain variations, it cannot give direct measurements of the lattice parameters that can be achieved with μ-XRD, making these techniques excellent complimentary methods of mapping residual strain in 3C-SiC.	May 2016
B16-Test Beamline	Electrical properties and strain distribution of Ge suspended structures V. A. Shah , S. D. Rhead , J. Finch , M. Myronov , J. S. Reparaz , R. J. Morris , N. R. Wilson , V. Kachkanov , I. P. Dolbnya , J. E. Halpin , D. Patchett , P. Allred , G. Colston , K. Sawhney , C. M. Sotomayor Torres , D. R. Leadley Solid-State Electronics 108, 13 - 18 DOI: 10.1016/j.sse.2014.12.004 Diamond Proposal Number(s): [8583] Show Abstract ▼ Abstract: Germanium membranes and microstructures of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.	Jun 2015

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