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Instruments / Technical Area	Publication Details	Published
I07-Surface & interface diffraction	Silicon Σ13(5 0 1) grain boundary interface structure determined by bicrystal Bragg rod X-ray scattering P. Howes , S. Rhead , M. Roy , C. Nicklin , J. Rawle , C. Norris Acta Materialia 61 (15), 5694 - 5701 DOI: 10.1016/j.actamat.2013.06.011 Show Abstract ▼ Abstract: The atomic structure of the silicon ?13(5 0 1) symmetric tilt grain boundary interface has been determined using Bragg rod X-ray scattering. In contrast to conventional structural studies of grain boundary structure using transmission electron microscopy, this approach allows the non-destructive measurement of macroscopic samples. The interface was found to have a single structure that is fully fourfold coordinated. X-ray diffraction data were measured at Beamline I07 at the Diamond Light Source	Jul 2013
I07-Surface & interface diffraction	X-ray diffraction study of a Si & sigma 13 symmetric tilt grain boundary S. D. Rhead , P. B. Howes , M. Roy , J. L. Rawle , C. Nicklin , C. Norris Diamond Light Source Proceedings 1 SRMS 2011 DOI: 10.1017/S2044820110000523 Diamond Proposal Number(s): [2072] Show Abstract ▼ Abstract: We present an X-ray diffraction study of a semiconductor symmetric tilt grain boundary. The theory of crystal truncation rod scattering is extended to bicrystal interfaces and compared with experimental data measured at the Diamond Light Source.	Oct 2010
	Atomic structure of CaF2/MnF2–Si(1 1 1) superlattices from X-ray diffraction Simon Alcock , Chris Nicklin , Paul Howes , Colin Norris , R N Kyutt , N S Sokolov , N I Yakovlev Applied Surface Science 253 (8), 3991 - 3999 DOI: 10.1016/j.apsusc.2006.08.040 Show Abstract ▼ Abstract: X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF2–Si(1 1 1) interface and ultrathin films of MnF2 and CaF2 within a superlattice. We show that ultrathin films of MnF2, below a critical thickness of approximately four monolayers, are crystalline, pseudomorphic, and adopt the fluorite structure of CaF2. High temperature deposition of the CaF2 buffer layer produces a fully reacted, CaF2–Si(1 1 1) type-B interface. The mature, “long” interface is shown to consist of a partially occupied layer of CaF bonded to the Si substrate, followed by a distorted CaF layer. Our atomistic, semi-kinematical scattering method extends the slab reflectivity method by providing in-plane structural information.	Feb 2007
	An investigation of the growth and removal of protective antimony caps for antimonide epilayers S. G. Alcock , M. J. Everard , C. L. Nicklin , J. S. G. Taylor , C. A. Norris , S. L. Bennett Thin Solid Films 514, 198-203 DOI: 10.1016/j.tsf.2006.02.083 Show Abstract ▼ Abstract: We present a surface X-ray diffraction and Auger electron spectroscopy investigation of antimony capping layers used to protect indium antimonide and gallium antimonide epilayers. A thermally induced amorphous to polycrystalline structural transition was observed at approximately 190 °C for Sb caps on InSb(0 0 1) and GaSb(0 0 1) substrates. We conclude that 100 nm Sb caps deposited at elevated substrate temperature (150–200 °C) have superior structural order, and are able to protect III-Sb epilayers from atmospheric contamination for periods of at least a year.	Aug 2006

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